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研究生: 林建邦
Chien-pang Lin
論文名稱: 低溫多晶矽薄膜電晶體面板之電性檢測技術與缺陷分析
Electronic Detect Technology about Low-Temperature Poly -Silicon Thin Film Transistors device and the defect analysis
指導教授: 范慶麟
Ching-Lin Fan
口試委員: 李志堅
Chih-Chien Lee
顏文正
none
學位類別: 碩士
Master
系所名稱: 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年: 2007
畢業學年度: 95
語文別: 中文
論文頁數: 66
中文關鍵詞: 電性檢測技術低溫多晶矽薄膜電晶體缺陷分析
外文關鍵詞: Electronic Detect Technology, defect analysis, LTPS
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  • 低溫多晶矽薄膜電晶體( Low-Temperature Poly-Si Thin Film Transistors, LTPS TFTs )面板被視為未來可能成為下一世代的顯示技術主流。由於LTPS的電晶體需進一步接受雷射回火的製程步驟,將非晶矽的薄膜轉變為多晶矽薄膜層,但是在量產線上仍無法精 確控制晶粒的大小與晶粒邊界數量的一致性,導致良率降低的問題。

    然而目前TFT-LCD面板的檢測方式主要是以自動光學檢測(automated optical inspection, AOI)系統來執行,不過一旦光學裝置不穩定或檢驗需求面積遠大於光學裝置極限,所獲得的數據是不足以被採信的。有鑑於此,本文所探討之電性檢測技術,是從面板的驅動IC電路來進行所謂的時序操作,以陣列測試器高速檢查TFT功能或週邊線路的電性特性,將畫素的資訊真實的呈現出來,並透過不同的控制模式能判別出缺陷的程度與總類,因此檢出瑕疵的關聯性比光學檢查更佳。再者目前日本手機所採用的液晶面板,以照相畫素顯示需求來看,要求顯示的畫素能夠達到26萬色、解析度是QVGA(240×320)以上,畫面尺寸增加到2.2吋以上,已經是被視為最基本的配備了。所以本文所探討之電性檢測的技術,針對一2吋之穿透式(Transmissive) LTPS且解析度為558×234的面板來進行量測與分析,以符合市場趨勢。

    本論文實驗的面板樣本與實驗儀器皆由華昀科技股份有限公司提供,藉由進行編輯檢測面板的時序控制電路來進行檢測動作,將抓取出來的影像資料做缺陷分析,本論文中探討的三個實驗樣本將與面板實際點亮的情形以及由光學檢測系統檢測到的影像來互相比較,最後的討論電性檢測技術的優勢以及未來市場趨勢。


    Electric crystal of the low-temperature polycrystalline silicon membrane (Low-Temperature Poly-Si Thin Film Transistors, LTPS TFTs) the panel is considered as the technological mainstream of display which may become the next generation in the future. Because electric crystal of LTPS is it accept to make step Cheng laser flash back further to need, change the membrane of the non-crystalline silicon into the polycrystalline silicon membrane layer, but produce the on-line still unable accurate size of controlling the crystalline grain and consistency of quantity of crystalline grain border in quantity, question causing the good rate to reduce.

    But the measuring way of TFT-LCD panel is mainly to measure with automatic optics at present (automated optical inspection, AOI) come to carry out systematically, but once the optics device is unstable or examines the area of demand and is far greater than the device limit of optics, the data obtained are not enough to be picked the letter. In view of this, the electricity detection technique that this text probes into, come to carry on the so-called time sequence operation from the drive IC circuit of the panel, check TFT function or the electricity characteristic of the peripheral circuit at a high speed with the array tester, plain information true appearing out will be drawn, and can differentiate out the degree of the defect through different control methods and always, so examine out checking better than optics relatedly of the flaw. Moreover the liquid crystal panel adopted of the Japanese cell-phone at present, the picture usually shows that the demand is seen in order to take pictures, it is the above of QVGA (240×320) that it can be up to 260,000 colors, analyze degree that the picture required and shown is plain, the size of picture rises to more than 2.2 inches, considered as the most basic outfit. So the technology of electricity measuring that this text probes into, going on amount examining and analysis has come for the panel of 558×234 to LTPS of piercing through type (Transmissive) and analyzing degree of one 2 inch, in order to accord with the market trend.

    The panel sample of this thesis experiment and laboratory apparatus are all offered by PRIMETECH, measure movements by editting the time sequence control circuit which measures the panel, and defect analysis that the image materials getting paying special attention to out are made. In this thesis it is with situation where panel light actually in experiment sample of three pieces when it probe into and can't measure from optics detection system to image compare each other coming, and the advantage of the last discussion electricity detection technique and future market trend.

    摘要(中文) 摘要(英文) 致謝 目錄 表索引 圖索引 第一章 序論 1.1 研究背景 1.2 研究動機 1.3 論文大綱 第二章 低溫多晶矽薄膜電晶體驅動IC介紹 2.1 驅動系統概觀(Driving System) 2.2 掃瞄驅動電路(Gate Driver) 2.3 資料驅動電路(Data Driver) 第三章 電性檢測技術與實驗步驟 3.1 電性檢測技術 3.1.1 原理簡介 3.1.2 檢測架構與儀器介紹 3.1.3 檢測流程、項目、方法 3.2 實驗步驟 3.2.1 參數設定 3.2.1.1 面板規格 3.2.1.2 時序控制電路與訊號編輯 3.2.2 資料後處理 3.2.2.1 資料傳輸 3.2.2.2 Duplicate演算法 第四章 實驗驗證與缺陷分析 4.1 缺陷總類&分析 4.2 實驗結果驗證 第五章 結論與未來展望 參考文獻

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