鉺摻雜氧化鋅已經由氣相轉換的過程製備。氧化鋅粉末、石墨粉末和氧化鉺的粉末混合置於高溫爐管中，然後加熱至1000°C並持溫1小時。摻鉺的氧化鋅沉積於接近混合粉末的矽基板上。摻鉺的氧化鋅樣品則用場發射掃描式電子顯微鏡(FE-SEM)、X光繞射譜線(XRD)、歐傑電子光譜儀(AES)、X光光電子能譜(XPS)、原子力顯微鏡(AFM)、及光激發螢光光譜(PL)分析。從FE-SEM照片中觀察到摻雜鉺的氧化鋅形成半球及甜甜圈奈米結構。半球狀半徑為200 nm ~ 400 nm。甜甜圈的外徑和內徑分別為420 nm ~ 580 nm及100 nm ~ 160 nm。半球及甜甜圈的成分經由歐傑電子光譜儀，X光光電子能譜分析得到Zn及O的原子比接近1:1。二次離子質譜儀對樣品做縱深分布、結果顯示鋅和氧為主要成分並且有極少量的鉺元素存在，其濃度約為0.05 at﹪。此外，光激發螢光光譜分析結果顯示，樣品在He-Cd雷射325 nm激發下，觀察到氧化鋅能隙發光於377 nm。在退火後，氧化鋅能隙發光消失而且觀察到綠色螢光於548 nm附近。這些綠色螢光是由於鉺的內層4f 電子由4S3/2 躍遷到4I15/2 和 4H3/2躍遷到4I15/2所致。

Erbium doped ZnO has been prepared by vapor-phase transport process. ZnO powder, graphite powder and Er2O3 powder were mixed and positioned in a tube furnace. The tube furnace is heated at 1000°C for 1 hour. Er:ZnO were deposition on silicon wafers located near by. Erbium doped ZnO samples were analyzed using field-emission scanning electron microscopy (FE-SEM), X-ray diffraction (XRD), Atomic Force Microscopy (AFM), Auger electron spectroscopy (AES), X-ray photoelectron spectroscopy (XPS), Secondary Ion Mass Spectroscopy (SIMS), and Photoluminescence (PL).
FE-SEM image shows that the as-deposited Er:ZnO has hemispherical and donut-shaped nanostructures. The radius of the hemispherical nanostructure varies from 200 nm ~ 400 nm. The outer radius and inner radius of the donut-shaped nanostructure is 42 0nm ~ 580 nm and 100 nm ~ 160 nm, respectively. The AES and XPS spectra show that the major composition element are Zn and O. The atomic ratio are approximately 1:1. SIMS analysis shows that Zn and O are major elements while the Er concentration is very low, approximately 0.05 at%. PL study of the as-prepared Er:ZnO sample using a He-Cd laser at 325nm shows strong ZnO bandgap emission at 377 nm. After annealed at 900°C for 30 minutes, bandgap emission disappears while green emissions near 548 nm were observed. These emissions are due to the intra-4f transition from 4S3/2 to 4I15/2 and from 4H3/2 to 4I15/2.

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