本實驗為利用射頻磁控濺鍍法沉積鋅薄膜，藉由調變射頻功率及靶材至基板的距離可控制鋅薄膜的結晶及表面型貌。實驗結果顯示多晶鋅薄膜在經450 ℃熱氧化可成長較多垂直於基板的氧化鋅奈米線，其平均長度約為4 m而其寬度約為~ 50 nm，氧化鋅奈米線其成長方向為[110]。室溫下氧化鋅奈米線的光激發光光譜顯示強的近能隙發光在376.8 nm，半高寬為100 meV，且有極少缺陷造成的可見光發光。場發射結果顯示氧化鋅奈米線在電流密度為0.1 μA/cm2時起始電場為4.5 V/μm，場發射增強因子為1834，且當施與場發射電場9 V/μm時，電流密度可達0.75 mA/cm2。

ZnO nanowires have been successfully grown by thermal oxidation of polycrystalline zinc films. ZnO nanowire length, diameter and wire density were found to be dependent strongly on zinc film crystallinity, oxidation temperature and oxidation time. Experimental results show that a polycrystalline zinc film is suitable for growth of vertically aligned ZnO nanowires. The growth mechanism of the nanowire is dominated by diffusion mechanism that oxidation at 450C results ZnO nanowires with the best field emission properties. Room temperature photoluminescence study shows a strong near-band-edge emission at 376.8 nm with a full-width-at-half maximum of 100 meV and negligible deep level emission. ZnO nanowire prepared under these conditions exhibit a turn on field of 4.5 V/m and a field enhancement factor of 1834. A target current density of 0.75 mA/cm2 is achieved with a bias field less than 9 V/m.

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