研究生: |
黃瀚霆 Han-ting Huang |
---|---|
論文名稱: |
矽鍺基金氧半發光與接收元件設計 The Design of SiGe-Based MOS Light Emitting & Receiving Devices |
指導教授: |
劉政光
Cheng-kuang Liu |
口試委員: |
張嘉男
none 周肇基 none 徐世祥 noen |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2008 |
畢業學年度: | 96 |
語文別: | 中文 |
論文頁數: | 71 |
中文關鍵詞: | 矽鍺 、發光 、接收 、元件 |
外文關鍵詞: | SiGe, Emitting, Receiving, Devices |
相關次數: | 點閱:345 下載:0 |
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本論文主要包含兩個研究主題,一為矽鍺雙極金氧半發光元件,另一為矽鍺雙極金氧半發光元件,文中比較數種佈局的特型。
第一部分討論發光元件的設計,利用矽鍺基雙極金氧半製程設計發光元件,探討數種佈局的發光效率,探討電流佈局,提升發光效率。不同的佈局方式下,所得最佳發光功率與電流的比值為1.5×10-8W/A,外部總量子效率為18.9×10-6。
第二部分則利用設計之矽鍺基金氧半元件逆向操作,以光照產生光電流,觀察其作為光偵測器的特性。
以上涵蓋兩大主題,特色為採用矽鍺材料為基底,並以SiGe BiCOMS製程來實現發光與檢光元件,本論文著重於利用現有成熟之製成設計與開發光電相關矽鍺基積體電路,並期有助於光傳輸互連系統之研究。
This thesis emphasizes on two topics, one is the SiGe-based light emitting device, and the other is the SiGe-based light receiving device. Several layouts and designs are presented together with measurement results.
In the first part, light emitting devices are presented. These devices are designed using the 0.35μm TSMC SiGe-based BiCMOS process. Several layouts are designed to study light emission efficiency. The influence of current distribution on the light emission efficiency is discussed. In our design, the best light emission efficiency and is 1.5×10-8W/A. Maximum external quantum efficiency obtained is 18.9×10-6.
Secondly, the SiGe-based BiCMOS light emitting device is used as photo detector, when a reverse bias is applied. Photo currents are measured and the photo detecting characteristics are studied.
In the two topics above, same structures and same materials are used for light emission and light detection. It is hoped that this study is helpful in the development of optical interconnect using the mature SiGe BiCMOS process.
[1] 林清富, “矽半導體發光的可能性,"光訊,第93期 , pp. 11-17, DEC.2001.
[2] 趙福光, “光積體電路現狀及未來展望, "光電資訊,第6期, pp. 43-50,June 1990.
[3] 廣慈資訊股份有限公司,通訊寶典(六)光纖通訊,第一章, 1994.
[4] N.Savage,“Linking with light high-speed optical interconnects,”IEEE Spectrum,pp.32-36,Aug.2002
[5] D. J. Lockwood, Light emission in silicon : from physics to devices,Academic Press,1998.
[6] D. A. Neamen, Semiconductor Physics & Devices, 台北市,台商圖書有限公司,pp.640-642,1998.
[7] 蘇亭偉, 奈米結構金氧矽發光二極體之特性研究,碩士論文,國立台灣大學, June 2002.
[8] M.du. Plessis, H. Aharoni, L.W. Snyman, “Spatial and intensity modulation of light emission from a silicon LED matrix, ” IEEE Photonics Technology Letters , vol. 14, pp.768-770, June 2002.
[9] L. W. Snyman, A. Biber, H, Aharoni, M. du. Plessis, B. D. Patterson, P. Seinz, “Higher-efficiency Si LED's with standard CMOStechnology,” EDMO, London, pp.340-345, Nov. 1997
[10] L. W. Snyman, A. Biber, H. Aharoni, M. du. Plessis, B. D. Patterson, P.Seinz., “Practical Si LED's with standard CMOS technology,” IEEE Southeastcon '98, Proceedings, Orlando, FL, pp.344-347, April 1998.
[11] L. W. Snyman., M. du. Plessis, E. Seevinck, H. Aharoni, “An efficientlow voltage, high frequency silicon CMOS light emitting device andelectro-optical interface, ” IEEE Electron Device Letters,vol. 20, no.12, pp. 614-615, Dec. 1999.
[12] L. W. Snyman, A. Biber, “Enhanced light emission from a siliconn+pn CMOS structure,” IEEE Proceedings, pp. 242-245, March 1999.
[13] A. Chatterjee, B. Bharat,“High speed, high reliability Si-based light emitters for optical interconnects,” Proceedings of the IEEE International, pp. 86-88, June 2002.
[14] H. C. Lee, C. K. Liu, “Si-based current-density-enhanced lightemission and low-operating-voltage light emitting/receiving designs,”Solid-State Electronics, vol. 49, pp.1172-1178, June 2005
[15] D. A. Neamen, Semiconductor Physics & Devices 2nd,ch.8,MacGraw-Hill, 1997.
[16] P.Bellutti,G.F.,Betta,N.Zorzi,R.Versari,A.Pieracci,B.Ricco,M.Manfredi,G.Soncini,“Fowler-Nordheim induced light emission from MOS diodes ,”IEEE ICMTS, Div. Microsistemi, ITC-IRST, Italy, pp. 223-226 , 2000
[17] C.W.Liu,M.H.Lee,C.F.Lin,I.C.Lin,W.T.Liu,H.H.Lin,“Light emission and detection by metal oxide silicon tunneling diodes,”Technology Digest International Electron Devices Meeting, Dept. of Electr. Eng., Nat. Taiwan Univ.,Taipei,pp.749-752,1999.
[18] D.V.Kerns, K.Arora S.Kurinec, W.Power,“Si diode under avalanche breakdown as a light emitting source for VLSI optical interconnect,”Proceedings,Twenty-First Southeastern Symposium on System Theory, Dept. of Electr. Eng. Vanderbilt Univ., Nashville, TN vol. 26-28, pp. 677-680,Mar.1989.
[19] M.D.Plessis, H.Aharoni, l.W.Snyman“Silicon light emitting devices in standard CMOS technology,” IEEE Semiconductor conference, Carl & Emily Fuchs Inst. for Microelectron, Pretoria Univ.pp.231-238,2001.
[20] M.Ingels,J.Crols,M.Steyaert,“A CMOS 18 THz 240Mb/s transimpedance amplifier and 155Mb/s LED-Driver for low cost optical fiber links,”IEEE Journal of Solid-State Circuit,vol.29,no.12,pp.1552-1559,Dec.1994.
[21] 陳春美,光照對蕭特基二極體之影響,碩士論文,國立台灣科技大學,1993.
[22] 蔡立民,接面二極體雜訊特徵的研究,碩士論文,國立台灣科技大學,1992.
[23] 余合興,光電子學-原理及應用,中央圖書出版社,1986.
[24] 林宜平,矽基晶片間光互連與對準之研究 ,碩士論文,國立台灣科技大學,2004.
[25] 徐照夫, 光感測器及其使用法,台北市,全華書局,1991.
[26] 李修至, The study of light emission in Si and its application to optical interconnectusing CMOS process,博士論文,國立台灣科技大學,2005.
[27] 賴鴻儒,積體電路晶片間光互連研究,碩士論文,國立台灣科技大學,2005
[28] 李源評, A study of Si-based ICs forchip-to-chip optical interconnect,碩士論文,國立台灣科技大學,2006.
[29] H.-C.Lee,S.-C.Lee, Y.-P.Lin,and C.-K.Liu, “ALL Si-based lowoperating-voltage and low power-dissipation device for optical interface,”IEICE Transactions on Electronics,vol.E88-C,no 7,pp.1490-1494,July,2005.
[30] C.F.Lin,C.W.Liu,M.J.Chen,M.H.Lee,I.C. Lin, “Electroluminescenceat Si band gap energy based on metal-oxide-silicon structures,”Journal Applied Phys, vol.87, pp.8793-8795, 2000.
[31] 陳奕甫,A Layout Study of Light Emission and Light DetectionDevices Using CMOS, 碩士論文,國立台灣科技大學,2006.