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研究生: 黃瀚霆
Han-ting Huang
論文名稱: 矽鍺基金氧半發光與接收元件設計
The Design of SiGe-Based MOS Light Emitting & Receiving Devices
指導教授: 劉政光
Cheng-kuang Liu
口試委員: 張嘉男
none
周肇基
none
徐世祥
noen
學位類別: 碩士
Master
系所名稱: 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年: 2008
畢業學年度: 96
語文別: 中文
論文頁數: 71
中文關鍵詞: 矽鍺發光接收元件
外文關鍵詞: SiGe, Emitting, Receiving, Devices
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  • 本論文主要包含兩個研究主題,一為矽鍺雙極金氧半發光元件,另一為矽鍺雙極金氧半發光元件,文中比較數種佈局的特型。
    第一部分討論發光元件的設計,利用矽鍺基雙極金氧半製程設計發光元件,探討數種佈局的發光效率,探討電流佈局,提升發光效率。不同的佈局方式下,所得最佳發光功率與電流的比值為1.5×10-8W/A,外部總量子效率為18.9×10-6。
    第二部分則利用設計之矽鍺基金氧半元件逆向操作,以光照產生光電流,觀察其作為光偵測器的特性。
    以上涵蓋兩大主題,特色為採用矽鍺材料為基底,並以SiGe BiCOMS製程來實現發光與檢光元件,本論文著重於利用現有成熟之製成設計與開發光電相關矽鍺基積體電路,並期有助於光傳輸互連系統之研究。


    This thesis emphasizes on two topics, one is the SiGe-based light emitting device, and the other is the SiGe-based light receiving device. Several layouts and designs are presented together with measurement results.
    In the first part, light emitting devices are presented. These devices are designed using the 0.35μm TSMC SiGe-based BiCMOS process. Several layouts are designed to study light emission efficiency. The influence of current distribution on the light emission efficiency is discussed. In our design, the best light emission efficiency and is 1.5×10-8W/A. Maximum external quantum efficiency obtained is 18.9×10-6.
    Secondly, the SiGe-based BiCMOS light emitting device is used as photo detector, when a reverse bias is applied. Photo currents are measured and the photo detecting characteristics are studied.
    In the two topics above, same structures and same materials are used for light emission and light detection. It is hoped that this study is helpful in the development of optical interconnect using the mature SiGe BiCMOS process.

    中文摘要.................................................Ⅰ 英文摘要.................................................Ⅱ 誌謝.....................................................Ⅳ 圖表索引.................................................Ⅸ 第一章 緒論 1 1.1前言 1 1.2研究動機 1 1.3章節說明 6 第二章 矽鍺MOS發光晶片研究 8 2.1 光通訊簡介 8 2.2 光通訊系統 9 2.3發光機制 9 2.3.1發光原理 10 2.3.2半導體發光材料特性 11 2.3.3復合機制 14 2.4發光元件介紹 15 2.4.1 PN二極體 16 2.4.2金氧矽穿隧發光元件 17 2.5發光晶片設計 19 2.5.1組成結構 20 2.5.2 晶片設計 22 第三章 矽鍺MOS光檢測晶片研究 27 3.1光感測器 27 3.2光電轉換基本原理 28 3.3光二極體 29 3.3.1 光二極體的分類 29 3.3.2 光二極體等效電路基本特性 31 3.2.4 光二極體溫度特性與暗電流分析 36 3.4檢光晶片設計 39 第四章 矽鍺MOS發光晶片/光檢測晶片量測 40 4.1發光晶片測試方法 40 4.2發光量測結果 41 4.2.1 I-V曲線 41 4.2.2發光特性 41 4.3 結果比較 44 4.3.1實際發光情形 44 4.3.2 發光效果比較 48 4.4光檢測晶片測試方法 50 4.5光檢測量測結果 51 4.5.1 以紅光雷射測試光檢測晶片 51 4.5.2 以發光二極體測試檢光晶片 53 4.6光檢測比較 57 4.6.1 田字型、日字型、緊密型設計比較 57 4.6.2 波長檢測比較 57 4.6.3 LED 與 Laser 57 4.7討論 60 4.7.1 發光效率 60 4.7.2 發光位置 61 4.7.3 設計差異 64 4.7.4 量測方法 64 4.7.5 檢測效果 65 第五章 結論 66 5.1研究重點 66 5.2未來研究方向 66 參考文獻 68 作者簡介 71

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