隨著地球資源日益減少，替代能源的開發越顯重要，太陽能電池即為目前替代能源研發重點之一，其中矽基太陽能電池所使用材料即為由複線式線鋸切割製程（multi-wire sawing process）所生產的單、多晶矽基板。本研究主要目的在於評估游離磨料複線式線切割所使用之漿料的可用性與切片製程對矽材料之移除率（material removal rate, MRR），以降低製程成本。本實驗設定兩組切割參數（S1、S2）實際鋸切多晶矽晶錠，量測其鋸切前後磨料粒徑分佈變化後，以機率理論中的常態分佈來建立粒徑分佈模擬程式（particle size distribution simulation program, PDSP），並以漿料含矽量與粒徑分佈變異係數（coefficient of variation, CV）來定義及計算漿料耐用係數（slurry durable index, SDI）。此外，本研究亦將漿料溫度的影響導入線鋸切割模式（wire sawing model, WSM）修正模擬材料移除率（MRR）。由實驗結果可知，漿料耐用係數與漿料重量、基板厚度與導輪溝槽間距比值呈反比，而與漿料內粒徑分佈標準差成正比。本研究所建立之粒徑分佈模擬程式（PDSP），未來可運用在模擬不同粉末之混粉粒徑分佈，而漿料耐用係數（SDI）可用來評估漿料壽命，提升製程競爭力。

Multi-wire sawing process with slurry has been popularly adopted for wafer slicing of silicon substrates for solar cells. This research is to develop a slurry durable index（SDI）to define the slurry life time, and add slurry viscosity and temperature into the wire sawing model（WSM）to improve the simulation accuracy of material removal rate（MRR）. There have been set two sawing parameters of free abrasive sawing process to cut the multi-crystalline silicon ingots. Investigating the silicon substrates （roughness, total thickness variation and subsurface damage）, the measured results are to define the affects of grits to wafers’ quality and the slurry life time after sawing. Calculation of SDI can be obtained by particle size analyzer to measure the particle size distribution（PSD）before and after wire sawing. The viscosimeter is used to measure the slurry viscosity with temperature and estimated the working grits number by immersing the wire into slurry at different temperature to improve the MRR. The result of SDI is 3.581 and proportion with particle size deviation of slurry. The slurry weight and ratio of wafer thickness to roller groove pitch is in inverse proportion. Results of this paper can be used to estimate the slurry life time and for maintaining the TTV under the desired specifications of silicon substrates for cost efficiency.

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