本論文使用具有超晶格(Super Lattice)結構的電子阻擋層(Electron Blocking Layer, EBL)的商用氮化鎵藍光LED晶圓，利用矽擴散的方式，將最上層的p-GaN反轉成n-GaN，使晶圓結構從原本p-i-n結構變成n-p-i-n結構光電晶體光偵測器，量測其暗電流(Dark current)、外部量子效應(EQE)、計算出響應率、響應時間。並與電子阻擋層結構為單一AlGaN材質的氮化鎵LED晶圓所製造的n-p-i-n結構光電晶體光偵測器(稱為A型光電晶體)進行比較。
　　使用超晶格的光電晶體光偵測器(稱為C型光電晶體)的元件在峰值波長384 nm，當偏壓VCE為0V、1.5V、3V、5V、7V下，峰值的外部量子效率分別為27.9%、34.1%、39.1%、43.3%、56.2%，對應的響應率分別為0.09A/W、0.11 A/W、0.12 A/W、0.13 A/W、0.17 A/W；C型光電晶體逆向偏壓未超過5V時，無論是暗電流量測、外部量子效率量測以及響應速度與p-i-n光偵測器有十分相似的特性，但當偏壓超過5V後，暗電流與外部量子效率開始有明顯的增加，而尤其是量測在偏壓為7V時開始產生明顯的電流增益。C型光電晶體在外部量子效率上沒有A型光電晶體來的優異，但響應速度與A型光電晶體相比快上了許多，接近於p-i-n光偵測器。本論文有討論其元件物理的差異。

This paper used a commercial gallium nitride blue LED wafer with an electron blocking layer (EBL) of a superlattice structure. The Si-diffusion method is used to invert the uppermost p-GaN into n-GaN, and the wafer structure is changed from the original p-i-n structure to n-p-i-n structure phototransistors. Measuring the dark current, the external quantum efficiency (EQE), the response rate, and the response time. Furthermore, comparing with an n-p-i-n structure phototransistors (which were named as A-type phototransistors) manufactured by a gallium nitride LED wafer whose EBL structure is a single AlGaN material.
By using a phototransistors of superlattice structure (called a C-type photo-crystal) is at a peak wavelength of 384 nm, when the bias voltage VCE is 0V, 1.5V, 3V, 5V, 7V, the EQE of the peak is respectively 27.9%, 34.1%, 39.1%, 43.3%, 56.2%, the corresponding response rates were 0.09A/W, 0.11 A/W, 0.12 A/W, 0.13 A/W, 0.17 A/W, respectively. When the reverse bias of the C-type phototransistors does not exceed 5V, the dark current, the EQE, and the response speed with much similar characteristics to those of the p-i-n photodetector. However, when the bias voltage exceeds 5V, the dark current and EQE begin to increase significantly, especially the measurement begins to produce significant current gain at a bias voltage of 7V.
The C-type phototransistors are not as excellent as the A-type phototransistors in EQE. But the response speed is much faster than the A-type phototransistors, which is close to the p-i-n photodetector. This paper has discussed the differences in the physicals of its components.

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