鉑釕(Pt-Ru)合金可以經由一些方法製備出，其中之一為採用薄膜製造技術。本研究宗旨在找到經由原子層沉積方法(atomic layer deposition, ALD)的鉑釕合金催化劑之反應區域。在使用ALD方法之前，我們經由化學氣相沉積(chemical vapor deposition, CVD)方法研究釕先驅物在不同基材上的反應，接著我們採用最佳的CVD條件來探討ALD的成長區域。另一方面，經由ALD方法以及利用氫氣當反應氣體來探討鉑沉積。最後我們嚐試結合CVD以及ALD技術在Si(111)基材上沉積鉑釕複合觸媒。

我們使用(bis(ethycyclopentadienyl) ruthenium)先驅物以及經由CVD方式沉積而成的釕觸媒，在不同基材上會呈現反應動力學的不同區域以及不同的薄膜型態。我們認為這是因為釕沉積受基材吸附控制，因此沉積釕觸媒在ALD方法上較在CVD方法上難。

接著我們利用ALD方法以及通入氫氣當作反應氣體使用三甲基環戊二烯基鉑(trimethylcyclopentadienyl)為鉑先驅物，可以在機材溫度為300℃以及350℃下沉積出接近單一原子層的鉑觸媒。在同樣暴露時間為2秒的清洗時間下，4秒的先驅物暴露時間會比6秒的先驅物暴露時間獲得更好的結果。而增加氫氣的暴露時間會導致氫氣移除先驅物而使成長速率下降。最後結合釕CVD技術以及鉑ALD技術應用在直接甲醇燃料電池(DMFC) ，我們發現利用氧氣取代氫氣當作反應氣體有更好的表現。此外，鉑觸媒的一氧化碳(CO)毒化現象經由結合CVD以及ALD技術而消失。

Pt-Ru alloy can be produced with some methods. One of these methods is applying thin film technology. The aim of this research is to find the reaction zone of depositing Pt-Ru alloy catalyst by atomic layer deposition (ALD) method. Before using ALD method, the reactions of Ru precursor on various substrates were studied by chemical vapor deposition (CVD) method to understand the baseline of Ru-CVD. Then, we applied the baseline condition of CVD method to investigate the ALD growth regime. On the other hand, we investigated the Pt deposition by ALD method using hydrogen as the reactive gas. Finally, we tried to combine CVD and ALD method for the deposition of Pt-Ru binary catalysts on Si(111) substrate.
Ru catalyst deposition by CVD method, the different regimes of reactions kinetics were taken place on different substrate, which resulted in different morphology of Ru catalyst by using bis(ethylcyclopentadienyl) ruthenium as precursor. Since Ru depositions were controlled by adsorption of precursor, Ru catalysts were more difficult applied by ALD method than by CVD method.
The hydrogen was used as the reactive gas to react with trimethylcyclopentadienyl platinum for Pt ALD. Close to 1 ML deposition of Pt can be achieved at substrate temperatures of 300 and 350oC. 2s exposure time of purge obtained good result for 4s exposure time of precursor but not enough when exposure time of precursor was increased to 6s. Increasing exposure time of hydrogen as the reactive gas resulted in a quite low growth rate because the hydrogen would remove the precursor, though they might not react to each other. Combination of Ru CVD and Pt ALD methods applied in DMFCs using oxygen as reactive gas gave the better performance compared with using hydrogen gas. Moreover, the CO poison of Pt catalysts can be eliminated by the combination of Ru CVD and Pt ALD methods.

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