本論文製作波長位於8-14 μm之遠紅外線發光元件，希望將此元件應用於生醫領域，例如促進血液循環、有助於消炎抑菌、有助於護膚美容等，以簡單、低成本的方式製作一個高效率之光源為本論文首要目標。
本論文改良先前製作之遠紅外線熱輻射發光元件，使熱輻射效率與熱輻射功率大幅上升。為了達到製程穩定性、低成本及大量製造的目標，本次元件皆使用自行設計的微機電製程製作發光元件，委託台灣半導體研究中心(TSRI)製作，最後與本校材料系朱瑾老師之學生合作在晶片表面製作不同週期的金屬奈米管陣列，以探討其對輸出功率、發光光譜與發光效率之影響。
本次重新設計加熱層材料，選用更高發射率的材料作為發射層，以達到高熱輻射效率與熱輻射功率。將加熱層位置往晶片表面移動，使其表面溫度升高，熱輻射功率與溫度成四次方正比，達到高熱輻射功率。本次元件也使用簍空玻璃基板，將PCB基板底下挖空，在晶片與基板中間墊一片150 µm的玻璃，以空氣隔絕熱能，防止熱能往基板散失。
本次元件經量測後，熱輻射效率與熱輻射功率皆較市售元件高，元件在7.6-V的偏壓下最高可達到7.45×10-3的發光效率，功率密度為0.681 mW/mm2，並實現發光頻譜波位於8至14 µm的波長。

In this thesis, a far-infrared light-emitting device in the wavelength range of 8-14 µm is fabricated for biomedical applications, such as promoting blood circulation, reducing inflammation and bacteriostasis, and skin care. The primary goal of this thesis is to realize a high-efficiency light source with simple fabrication and low cost.
The far-infrared thermal radiation light-emitting devices developed before are renovated to greatly increase the thermal radiation efficiency and thermal radiation power. In order to achieve the goal of process stability, low cost, and mass production, the light-emitting devices were fabricated using self-designed MEMS processes that were conducted in Taiwan Semiconductor Research Center (TSRI). Different periods of metal nanotube arrays are fabricated on the surface of the wafer for investigating their effects on the emitted power, spectrum, and efficiency.
The material of the heating layer is redesigned to use the material with higher emissivity as the emission layer to achieve high thermal radiation efficiency and thermal radiation power. The heating layer is moved close to the surface of the wafer to increase the surface temperature and the thermal radiation power. The fabricated device was attached onto a glass substrate on a hollow PCB substrate. A piece of 150 µm glass is placed between the wafer and the substrate to prevent heat dissipation to the substrate.
The measurement of the device performance indicates that the thermal radiation efficiency and thermal radiation power are higher than those of the commercially available devices. The device can reach a maximum conversion efficiency of 7.45×10-3 under a 7.6-V bias voltage, and the power density can reach 0.681 mW/mm2. The emission spectrum covers the wavelength range from 8 to 14 µm.

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