受到地球能源耗竭之危機，各國開始重視降低碳排量等議題，其中以發光二極體(Light-emitting diode, LED)備受焦點。目前LED基板主要使用材料為單晶氧化鋁或藍寶石基板，此基板大多以複線式線鋸切割製程或鑽石線鋸(Diamond wire sawing, DWS)進行晶錠切片(Slicing)。本研究主要的目的為探討搖擺角度對晶錠尺寸之關係，並推導搖擺角度對切削面積之變化，探討藍寶石滑移及劈裂方向，建立一套3D單晶氧化鋁次表面破壞(Sub-surface damage, SSD)裂縫(crack)模型。本研究實驗部分設定三種參數(DWS-1、DWS-2及DWS-3)，針對不同線材、不同搖擺角度進行分析，並且以指數擬合之方式定義線材負載能力(Wire load ability, WLA)對線材穩定度(Wire stability, WS)，觀察在不同拉伸速度對線材之影響。由實驗結果可知，C面單晶氧化鋁滑移方向有<21 ̅1 ̅0>、<1 ̅21 ̅0>與<1 ̅1 ̅20>，線材穩定度(WS)值愈小，代表較不易受拉伸速度影響，穩定性較高。另本研究建立C面藍寶石次表面破壞模型及搖擺機制模型，可運用於觀察藍寶石次表面裂縫與改善搖擺式線鋸切割製程，進而提昇切削圓形晶錠製程能力。研究成果可應用於複線式線鋸切割大尺寸藍寶石製程。

With the energy crisis of earth, environmental concerns attract highly attention of governments to consider alleviating the amount of carbon dioxide. Lighting emitting diode (LED) has become as an alternative of energy saving. Most substrate of LED adopts sapphire or mono-crystalline alumina oxide which is sliced by multi-wire sawing or diamond wire sawing (DWS) process. This study is to derive a 3D crack orientation model in sub-surface damage (SSD) of sapphire wafer to investigate the influences of rocking angle of DWS on the dimensions of ingot and also fracture direction. In this research, three experiments of DWS-1, DWS-2 and DWS-3 have been conducted for analyzing the surface roughness and hardness of as-cut wafer. Moreover, with exponential fitting method, this study defines performance index of wire load ability (WLA) and wire stability (WS) to justify the influence of various tensile speed on the properties of wire. Experimental results show that the crack slipped direction of c-plane sapphire wafer include <21 ̅1 ̅0>, <1 ̅21 ̅0> and <1 ̅1 ̅20>. With the lower value of wire stability (WS), the diamond wire performs higher stability without affecting by tensile speed of wire. This research has established the SSD model of sapphire wafer and investigated the rocking motion effect on DWS. Therefore, it can be utilized for improving the process of DWS with rocking motion. For further application on larger sapphire wafers DWS.

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