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研究生： 劉怡忻
Yi-Hsin Liu
論文名稱： 以氬氧混合氣體感應耦合電漿低溫輔助氧化4H碳化矽的製程探討
Low temperature oxidation of 4H-SiC using Ar/O2 inductively coupled plasma
指導教授： 洪儒生
Lu-Sheng Hong
口試委員: 陳良益
Liang-Yih Chen
胡振國
Jenn-Gwo Hwu
學位類別： 碩士
Master
系所名稱： 工程學院 - 化學工程系
Department of Chemical Engineering
論文出版年： 2022
畢業學年度： 110
語文別： 中文
論文頁數： 88
中文關鍵詞： 碳化矽 、感應耦合電漿 、氧化製程 、閘極氧化層
外文關鍵詞： inductively coupled plasma, interface state density
相關次數： 點閱：155  下載：0 
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    • 摘要 II Abstract III 致謝 IV 目錄 V 圖目錄 VIII 表目錄 XII 第一章 緒論 1 1.1 前言 1 1.2 研究動機 3 第二章 文獻回顧 4 2.1 碳化矽(silicon carbide, SiC) 4 2.1.1 碳化矽結構 4 2.1.2 碳化矽特性 6 2.2 金氧半電容器(Metal-Oxide-Semiconductor Capacitor, MOS Capacitor) 8 2.2.1 理想狀態之金氧半電容器 8 2.2.2 金氧半電容器之電容量測 10 2.3 SiO2/SiC界面缺陷 12 2.3.1 形成SiO2/SiC界面缺陷的因素 12 2.3.2 SiO2/SiC界面缺陷密度的評估 14 2.4 碳化矽的氧化製程 16 2.4.1 熱氧化 (thermal oxidation)製程 16 2.4.2 陽極氧化(anodization)製程 18 2.4.3 電漿輔助氧化(plasma enhancement oxidation)製程 19 第三章 實驗方法與設備 21 3.1 實驗材料 21 3.2 實驗設備 23 3.2.1 高溫爐 23 3.2.2 感應耦合電漿輔助氧化系統 25 3.2.3 共濺鍍系統 28 3.3 分析儀器 30 3.3.1 橢圓偏光儀(Spectroscopic ellipsometry, SE) 30 3.3.2 X射線光電子能譜儀(X-Ray photoelectron spectroscope, XPS) 31 3.3.3 掃描式電子顯微鏡(Scanning electron microscope, SEM) 32 3.3.4 電性量測系統 33 3.4 實驗步驟 35 3.4.1 RCA清潔法 36 3.4.2 熱氧化製程 37 3.4.3 ICP輔助氧化製程 37 3.4.4 金屬閘極與背電極 38 第四章 結果與討論 39 4.1 高溫熱氧化4H-SiC晶片的製程 39 4.1.1 熱氧化溫度對4H-SiC的氧化速率與晶片表面形貌之效應 39 4.1.2 熱氧化處理後的SiO2/4H-SiC界面處元素分布分析 43 4.2 ICP輔助氧化4H-SiC晶片的製程 47 4.2.1 基材溫度對4H-SiC氧化速率之效應 47 4.2.2 ICP輔助氧化電漿功率對4H-SiC的氧化速率與表面形貌之效應 52 4.2.3 ICP輔助氧化處理後的SiO2/4H-SiC界面處元素分布 55 4.3 金屬(鎳)/半導體(碳化矽)的接觸特性 60 4.3.1 濺鍍鎳金屬薄膜於4H-SiC晶片 60 4.3.2 金屬後退火對金半接觸特性之影響 63 4.3.3 金屬(鎳)/半導體(碳化矽)的接觸電阻 67 第五章 結論 71 第六章 參考文獻 72

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