研究生: |
周芳宇 Fang-Yu Zhou |
---|---|
論文名稱: |
應用於非侵入式血糖偵測系統之 28-30 GHz接收器前端電路 A 28-30 GHz Receiver Front-end Circuit for Non-Invasive Glucose Sensing System |
指導教授: |
陳筱青
Hsiao-Chin Chen |
口試委員: |
邱弘緯
Hung-Wei Chiu 楊成發 Chang-Fa Yang |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電機工程系 Department of Electrical Engineering |
論文出版年: | 2018 |
畢業學年度: | 106 |
語文別: | 英文 |
論文頁數: | 68 |
中文關鍵詞: | 低雜訊放大器 、微混頻器 、單晶微波積體電路 、非侵入式血糖偵測系統 |
外文關鍵詞: | low noise amplifier, micromixer, monolithic microwave integrated circuit, non-invasive glucose sensing system |
相關次數: | 點閱:343 下載:2 |
分享至: |
查詢本校圖書館目錄 查詢臺灣博碩士論文知識加值系統 勘誤回報 |
本論文使用TSMC 90-nm CMOS製程,設計並實作一個應用於非侵入式血糖偵測之28-30 GHz接收器前端電路。此前端電路由低雜訊放大器以及混頻器組成。低雜訊放大器在頻率為29 GHz的功率增益為19.43 dB,且雜訊指數為6 dB。操作電壓和電流消耗分別為1.2 V和21.9 mA。由於低雜訊放大器串接混頻器,所以低雜訊放大器的輸出阻抗以及混頻器的輸入阻抗皆達到50 Ω。混頻器執行從28-30 GHz頻率到10MHz的頻率轉換。模擬結果表示,混頻器的轉換增益為 2-3 dB,三階輸入截止點為 – 7 dBm,雜訊指數為26 dB。混頻器採用1.2 V的操作電壓,電流消耗為0.83 mA。
A 28-30 GHz RF front-end circuit for non-invasive glucose sensing system is designed and fabricated in a standard TSMC 90nm CMOS process. The LNA achieves the power gain of 19.43 dB at 29 GHz and the minimum noise figure of 6 dB at 29 GHz. The supply voltage and current consumptions are 1.2 V and 21.9 mA, respectively. Based on the micro-mixer, the impedance between LNA output and mixer input of 50 Ω is achieved.
The mixer performs frequency translation from the 28-30 GHz band to 10 MHz. Simulation results show the conversion gain of 2~3 dB, the IIP3 ¬of -7¬¬ dBm and the NF of 26 dB can be achieved. Operating from the 1.2-V supply, the mixer consumes the current of 0.83 mA.
[1] P. H. Siegel, A. Tang, G. Virbila, Y. Kim, M. C. F. Chang and V. Pikov, "Compact non-invasive millimeter-wave glucose sensor," 2015 40th International Conference on Infrared, Millimeter, and Terahertz waves (IRMMW-THz), Hong Kong, 2015, pp. 1-3
[2] Vashist, S. K. Non-invasive glucose monitoring technology in diabetes management: A review. Analytica chimica acta 750, 16–27 (2012).
[3] Tamada, J. A. et al. Noninvasive glucose monitoring - Comprehensive clinical results. Jama-J Am Med Assoc 282, 1839–1844GHJKHKL
[4] Alexeeva, N. V. & Arnold, M. A. Impact of tissue heterogeneity on noninvasive near-infrared glucose measurements in interstitial fluid of rat skin. Journal of diabetes science and technology 4, 1041–1054 (2010).
[5] Cho, O. K., Kim, Y. O., Mitsumaki, H. & Kuwa, K. Noninvasive measurement of glucose by metabolic heat conformation method. Clinical Chemistry 50, 1894–1898 (2004).
[6] S. C. Shin, Ming-Da Tsai, Ren-Chieh Liu, K. Y. Lin and Huei Wang, "A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology," in IEEE Microwave and Wireless Components Letters, vol. 15, no. 7, pp. 448-450, July 2005.
[7] D. K. Shaeffer and T. H. Lee, "A 1.5-V, 1.5-GHz CMOS low noise amplifier," in IEEE Journal of Solid-State Circuits, vol. 32, no. 5, pp. 745-759, May 1997.
[8] S. C. Shin, Ming-Da Tsai, Ren-Chieh Liu, K. Y. Lin and Huei Wang, "A 24-GHz 3.9-dB NF low-noise amplifier using 0.18 μm CMOS technology," in IEEE Microwave and Wireless Components Letters, vol. 15, no. 7, pp. 448-450, July 2005. 1
[9] M. A. Masud, H. Zirath, M. Ferndahl and H. O. Vickes, "90 nm CMOS MMIC amplifier," 2004 IEE Radio Frequency Integrated Circuits (RFIC) Systems. Digest of Papers, 2004, pp. 201-204. 1
[10] B. Gilbert, "The MICROMIXER: a highly linear variant of the Gilbert mixer using a bisymmetric Class-AB input stage," in IEEE Journal of Solid-State Circuits, vol. 32, no. 9, pp. 1412-1423, Sep 1997.
[11] Y. L. Wei, S. S. H. Hsu and J. D. Jin, "A Low-Power Low-Noise Amplifier for K-Band Applications," in IEEE Microwave and Wireless Components Letters, vol. 19, no. 2, pp. 116-118, Feb. 2009.
[12] H. C. Yeh, C. C. Chiong, S. Aloui and H. Wang, "Analysis and Design of Millimeter-Wave Low-Voltage CMOS Cascode LNA With Magnetic Coupled Technique," in IEEE Transactions on Microwave Theory and Techniques, vol. 60, no. 12, pp. 4066-4079, Dec. 2012.
[13] F. Ellinger, “26–42 GHz SOI CMOS low noise amplifier,” IEEE J.Solid-State Circuits, vol. 39, no. 3, pp. 522–528, Mar. 2004.
[14] Z. Li, J. Cao, Q. Li and Z. Wang, "A wideband Ka-band receiver front-end in 90-nm CMOS technology," 2013 European Microwave Integrated Circuit Conference, Nuremberg, 2013, pp. 5-8.
[15] B. Ding, S. Yuan, C. Zhao, L. Tao and T. Tian, "A Ka band FMCW Transceiver front-end with 2GHz bandwidth in 65-nm CMOS," in IEEE Transactions on Circuits and Systems II: Express Briefs.