本設計使用 TSMC 180 nm CMOS 製程實現基於Envelope-Tracking (ET)的動態偏壓電路，以提高應用於WIFI 6 HBT GaAs PA的效率。動態偏壓電路是利用Hybrid Supply Modulator所構成，其中Hybrid Supply Modulator係由Linear Modulator與Switching Modulator所組成。電路使用5 V電源供應並消耗0.155 W，當輸入訊號在1.5 V至3.5 V之間時，本電路提供1.5 V至3.5 V的輸出偏壓。電路的輸出電壓在20 MHz至100 MHz時產生10.324 mVPP至5.581 mVPP之紋波。根據測量結果，採用動態偏壓電路後，PA在輸出功率為27 dBm時，其PAE達到54.07%。

An envelope-tracking (ET) based dynamic biasing circuit is designed and implemented using TSMC 180-nm CMOS technology to improve the efficiency of the HBT GaAs PA for WIFI 6 wireless communication applications. Based on the hybrid supply modulator, the dynamic biasing circuit consists of a wideband linear modulator, and a switching modulator. Consuming 0.155 W from the 5-V supply, the circuit provides the output bias voltage from 1.5 V to 3.5 V for an input level from 1.5 V to 3.5 V. The output voltage of the circuit exhibits the ripple of 10.324 mVPP to 5.581 mVPP from 20 MHz to 100 MHz. The measurement results show that a PAE of 54.07 % was achieved at the output power of 27 dBm by using the dynamic biasing circuit.

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