4H碳化矽基板作為高功率半導體重要材料，表面的缺陷對後續元件品質有很大的影響，本研究探討基板材料中的碳包裹物缺陷對磊晶後的表面缺陷有何影響。材料選用6吋N-Type晶圓，在表面以微分干涉影像與光致發光(Photoluminescence)影像檢出碳包裹物，再將其表面以CVD(Chemical Vapor Deposition)方法同質磊晶11 µm的碳化矽磊晶層，完成後再對表面同樣以微分干涉、光致發光觀察，找出在磊晶過後碳包裹物產生了何種缺陷。
接著對常見缺陷深入探討，以非破壞性檢測與破壞性檢測手段分析各種缺陷。非破壞性檢測在缺陷處以光學顯微鏡、拉曼光譜檢測表面與碳包裹物特性；破壞性檢測則以熔融KOH蝕刻揭露差排缺陷，具體以蝕刻、移除部分厚度、再蝕刻的方式，多層次觀察碳包裹物產生的磊晶缺陷在磊晶過程中的衍生機制。
最後在歸類數種磊晶缺陷後，統計碳包裹物產生各類磊晶缺陷的機率。

As a promising material for high performance IC, quality of 4H-SiC N-Type substrate is the key of making excellent chips. In this paper, we focus on a defect which is called carbon inclusion. Specimens are 150mm (6 inch) polished wafers product. In the beginning, carbon inclusions are inspected by both confocal optics and photoluminescence inspection system. Then 11 µm homoepitaxial layer is deposited on wafer by CVD, and inspected by confocal optics and photoluminescence inspection system. By the position of the defect, relationship between carbon inclusions and epitaxial defects is confirmed.
Then we studied these defect in detail by non-destructive methods and destructive methods to investigate their property. Non-destructive methods include optical microscope and Raman spectroscopy, these instruments provide the information of chemical composition of these defects both on the surface and underneath the surface. On the other hand, destructive method requires repeat procedure of KOH etching and thickness removing layer by layer. KOH etching unveils the invisible defects in the epitaxial layer, help us understand the mechanism of defect development.
Last but not least, carbon inclusions on full wafer is classified and statistic is reported.

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