顯示器在日常生活中的應用越來越廣泛，其應用包含高畫素大尺寸主動矩陣式有機發光二極體顯示器、虛擬時境及互動式顯示器，這些下一世代的顯示器皆具備高畫素密度，而金屬氧化物薄膜電晶體搭配傳統的二氧化矽閘極絕緣層的電特性效能已經不符合外來顯示器的需求。此外，在一般的使用下，顯示器是在大氣環境下操作，因此顯示器內部的薄膜電晶體需要製作一層保護層來隔絕空氣中的水氣及氧氣。因此，本論文的研究主題包含：1. CF4電漿處理技術提升铟鎵鋅氧化物薄膜電晶體電特性效能之研究；2. 鐵氟龍/二氧化矽雙層保護層應用在铟鎵鋅氧化物薄膜電晶體之環境穩定性的探討；3. 3T0.5C AM-OLED畫素驅動電路的設計與研究及4. 銦鋅錫氧化物光電晶體應用於光感測器之研究。我們利用氧化鉿當作閘極絕緣層來製作铟鎵鋅氧化物薄膜電晶體，所製作出來的電晶體其載子遷移率達30 cm2/V∙s，此外，為了更進一步的提升電晶體的電特性及載子遷移率，我們使用CF4電漿處理技術應用在铟鎵鋅氧化物薄膜電晶體，經過處理過後的電晶體其載子遷移率顯著的提升至54.6 cm2/V∙s，而且元件的遲滯效應也有跟著降低。在鐵氟龍/二氧化矽雙層保護層的研究方面，在二氧化矽下先沉積一層鐵氟龍薄膜的目的是為了降低沉積二氧化矽時的電漿傷害，因此此雙層絕緣層的製程並不會影響到薄膜電晶體的電特性，且可以有效的提供阻擋水氣的效果。
在AM-OLED顯示器畫素補償電路的研究上面，我們提出了一個3T0.5C的畫素補償電路，此畫素電路具備補償驅動電晶體臨界電壓偏移的功能及可持續提供一負偏壓給OLED提升OLED的壽命。金屬氧化物薄膜電晶體除了可以當作開關元件之外，其還可以當作光電晶體，此是由於金屬氧化物本身為寬能隙的材料，因此金屬氧化物薄膜對於紫外線波段相當敏感，在本篇論文中，我們提出了使用銦鋅錫氧化物半導體來製作薄膜電晶體式的光感測器，由於我們使用高介電常數氧化鉿材料當作閘極絕緣層來提升光電晶體的載子遷移率，因此所製作出來的銦鋅錫氧化物光電晶體的載子遷移率高達89.47 cm2/V∙s，高的載子遷移率將有助於產生較好的光響應電流提升光電晶體的響應度，所製作出來的光電晶體其光響應度可達108 A/W，在光感測器領域算是相當大的突破。

In view of high resolution and fast operation are the demands of the next generation displays. The improvement of the electrical performance and carrier mobility of the oxide thin-film transistors (TFTs) is critical due to the operation speed of the active-matrix organic light emitting diode (AM-OLED) displays pixel circuit is related to the TFT performance. In addition, in the practical application, the environmental effect is a crucial issue in oxide-TFT due to the ambient molecules will seriously degrade the characteristics of the oxide TFT. Thus, the electrical performance and the reliability of the oxide TFT should be investigated and improved. This dissertation proposed a high performance amorphous indium-gallium-zinc oxide (a-IGZO) TFT with high dielectric constant HfO2 gate insulator. The carrier mobility of the a-IGZO TFTs reaches 30.2 cm2/V∙s. In addition, after the CF4 plasma treatment on the IGZO channel, the carrier mobility of the a-IGZO TFT significantly improves to 54.6 cm2/V∙s, and the hysteresis phenomenon of the a-IGZO TFT also decreases after the CF4 plasma treatment. On the other hand, the reliability of a-IGZO TFTs with Teflon/SiO2 bilayer passivation prepared under positive and negative gate bias stresses (PGBS and NGBS, respectively) was investigated. The Teflon/SiO2 bilayer passivation can effectively block the molecules from ambient environment and the reliability of the a-IGZO TFTs are further improved.
As for the application to the AM-OLED displays, a 3T0.5C compensating pixel circuit with the simultaneous emission (SE) method are proposed in this dissertation. The 6T1C pixel circuit is built on two adjacent pixels, and thus the equivalent circuit is 3T0.5C, which has a superior aperture ratio. The pixel circuit can compensate for the DTFT’s threshold voltage deviation and provide a reverse bias to the OLED to ameliorate the OLED lifetime.
Besides the application as switching device in the AM-OLED displays, metal oxide semiconductor materials can also be utilized to photodetector. The IZTO semiconductor is the first time to utilize as the active layer to fabricate photo-TFT in this dissertation. The a-IZTO photo-TFT was employed with the high-k HfO2 gate insulator and the films of the device were patterned by photolithography. The carrier mobility of the a-IZTO photo-TFT reaches 89.47 cm2/V∙s, which is beneficial to the transportation of the light-induced carriers to provide high photoresponsivity. The small detection area of the proposed photo-TFT with a high responsivity indicates that the device has high potential to apply in the active-matrix sensor array. It is believed that the IZTO semiconductor has high potential for utilizing as an active layer of the photodetectors.

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