近年來，主動式有機發光二極體顯示器由於擁有比傳統液晶顯示器更高的對比度、更快速的反應時間、更低的消耗功率以及更寬廣的視角而成為顯示器市場的焦點。主動式有機發光二極體的畫素電路有三個主要的背板技術，包含非晶矽薄膜電晶體、低溫多晶矽薄膜電晶體、非晶氧化物半導體薄膜電晶體。自從第一篇使用非晶氧化銦鎵鋅作為主動層的薄膜電晶體文獻發表後，非晶氧化物半導體材料越來越被受到重視，因為它相比非晶矽薄膜電晶體有著更高的載子遷移率，且在製程上比起低溫多晶矽薄膜電晶體有更良好的均勻性。然而，由於非晶氧化銦鎵鋅作為主動層的薄膜電晶體的載子遷移率是不足以應用於未來超高畫質顯示器以及低電壓驅動的攜帶型裝置，因此非晶氧化銦鋅錫薄膜電晶體被認為是可以實現高載子遷移率的非晶氧化物半導體薄膜電晶體。儘管非晶氧化銦鋅錫薄膜電晶體在電性上有良好的表現，但在閘極偏壓電應力下之臨界電壓不穩定性以及在製程上造成載子遷移率的不均勻仍然是需要被克服的問題。
迄今為止，有許多畫素電路的補償架構被提出來解決薄膜電晶體臨界電壓變異的問題。然而，薄膜電晶體載子遷移率的變異、有機發光二極體的老化以及電壓源產生的電壓降並沒有被考慮到。除此之外，被提出的畫素電路中很少提供逆偏壓以增加有機發光二極體的壽命。因此，本論文針對不同的顯示器尺寸和應用提出了兩個畫素補償電路。
第一個提出的 5T2C 電路使用非晶氧化銦鋅錫薄膜電晶體，為小尺寸攜帶式主動式有機發光二極體顯示器而設計，針對薄膜電晶體臨界電壓的變異、電壓源產生的電壓降以及有機發光二極體的老化做補償，且防止了電路補償過程中可能產生的畫面閃爍現象。在低電壓驅動的情況下，畫素電路可以應用於實際的攜帶式裝置上。第二個是應用於中尺寸高解析度主動式有機發光二極體顯示器的 4T2C 畫素電路。此電路可以補償薄膜電晶體臨界電壓與載子遷移率的變異、電壓源所產生的電壓降以及有機發光二極體的老化。除此之外，此畫素電路提供逆偏壓以抑制有機發光二極體的老化。

Recently, active-matrix organic light-emitting diode (AMOLED) displays have been focused in display markets because its higher contrast ratio, faster response time, lower power consumption, and wider viewing angles over conventional liquid crystal displays (LCDs). For AMOLED pixel circuits, there are three main backplane technologies, which are amorphous-silicon (a-Si) thin-film transistor (TFT), low-temperature polycrystalline-silicon (LTPS) TFT and amorphous oxide semiconductor (AOS) TFT. Since the first report of TFT with amorphous indium-gallium-zinc-oxide (a-IGZO) as a channel layer, the AOS materials have attracted more and more attentions because of their higher mobility comparing to a-Si TFTs and better uniformity comparing to LTPS TFTs. However, because the mobility of TFT with a-IGZO thin film as a channel layer is not high enough for future ultra-high definition (UHD) displays and low-voltage driving portable applications, amorphous indium-zinc-tin oxide (a-IZTO) TFT had been reported to achieve high mobility AOS TFT. Although a-IZTO TFT offers prominent device performance, its threshold voltage instability under gate voltage bias-stress and mobility non-uniformity during the TFT fabrication still remains as problems to be used for AMOLED displays.
To date, several compensating pixel circuit have been proposed to solve the problems of threshold voltage (VTH) variation of TFT. Nevertheless, the mobility variation of TFT, OLED degradation, and I-R drop of power line (VDD) are not considered. Additionally, less of the pixel circuits provide a reverse-bias to increase lifetime of OLED. Thus, this thesis proposes two compensating pixel circuits for different display sizes and applications.
The first 5T2C pixel circuit using a-IZTO TFTs are design for portable AMOLED displays with compensating for VTH variation of TFT (VTH_TFT)/I-R drop of power line/OLED degradation. Moreover, the circuit prevents the displays from flicker. With low-voltage driving, the pixel circuit is useful to be used in real portable applications. The second 4T2C pixel circuit is for high resolution medium-sized AMOLED displays. The pixel circuit can compensate the VTH_TFT, mobility variation of TFT, I-R drop of VDD and OLED degradation. Moreover, the pixel circuit provides a reverse bias to suppress the aging of OLED.

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