研究生: |
游大慶 Ta-Ching Yu |
---|---|
論文名稱: |
一個基於TLC快閃記憶體的保留錯誤、讀取干擾錯誤和霍夫曼編碼之協調方法 CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory |
指導教授: |
吳晋賢
Chin-Hsien Wu |
口試委員: |
陳雅淑
Ya-Shu Chen 謝仁偉 Jen-Wei Hsieh 修丕承 Pi-Cheng Hsiu 吳晋賢 Chin-Hsien Wu |
學位類別: |
碩士 Master |
系所名稱: |
電資學院 - 電子工程系 Department of Electronic and Computer Engineering |
論文出版年: | 2021 |
畢業學年度: | 109 |
語文別: | 英文 |
論文頁數: | 61 |
中文關鍵詞: | 快閃記憶體 、霍夫曼編碼 、可靠度 、保留錯誤 、讀取干擾錯誤 |
外文關鍵詞: | NAND Flash Memory, Huffman Coding, Reliability, Retention Errors, Read Disturb Errors |
相關次數: | 點閱:478 下載:11 |
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Nowadays, TLC NAND flash memory has become a mainstream storage medium because of its large capacity and low cost. However, TLC NAND flash memory could have the reliability problem (such as the retention errors and the read disturb errors), as the cell capacity increases. Because the reasons of the retention errors and the read disturb errors are due to 8 different states in a TLC cell, we will propose a method to coordinate the retention errors, the read disturb errors and the Huffman coding on TLC NAND flash memory by removing some unsuitable states when different data accesses are considered. According to the experimental results, the proposed method can utilize the compression of the Huffman coding to improve the performance. In addition, the proposed method can also remove the unsuitable states that are susceptible to the retention errors or the read disturb errors to enhance the reliability of TLC NAND flash memory.
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