本實驗利用原子轉移自由基聚合(Atom Transfer Radical Polymerization, ATRP)於圖案化矽晶圓製備表面起始聚甲基丙烯酸 2-(二乙氨基)乙酯(Poly(2-(Diethylamino)ethyl methacrylate)， PDEAEMA、聚甲基丙烯酸(Poly(methacrylic acid))， PMAA的共聚高分子刷。
利用X射線光電子能譜儀(XPS)、傅立葉轉換紅外線光譜儀(FT-IR) 分析表面組成並利用原子力顯微鏡(AFM)、雷射能量分析儀分析高分子刷高度50nm-150nm的關係，可以發現隨高度的上升，能量回隨之下降，結果顯示可在線/間距比率為1:1.5的圖案化光阻矽晶圓表面長出現寬為1、1.5、2、3μm的一維光柵。

In this study, patterned PDEAEMA-PMAA co-polymer brushes were grafted from silicon substrates with VLSI processes. First at all, photoresists were patterned as line arrays with lithography process. Sequentially, the surfaces were treated with oxygen plasma to generate line patterns of hydrophilic groups. Halogen groups were immobilized through the line patterns of hydrophilic groups as initiators of ATRP. Finally, PDEAEMA-PMAA co-polymer brushes were grafted from the line patterns to generate polymer gratings. The composition of the surface at each stage of fabrication were verified with X-ray photoelectron spectroscopy (XPS) and Fourier transform infrared spectroscopy(FT-IR). In addition, we designed a laser system to observe the intensity of reflective diffraction. Thickness of the polymer brushes were analyzed with atomic force microscopy (AFM) and the laser system.

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