本研究將Cu-Ge二元過共晶合金利用陽極氧化鋁(AAO)輔助模板真空液壓鑄造法，可以獲得Cu3Ge/Ge兩種材料順序相接且界面清晰的Cu-Ge合金奈米線異質結構。第一步使用高純度鋁片(99.999％)浸泡至過氯酸(15％)-乙醇(70％)-單丁醚乙醇(15％)混和溶液中經由電壓40V進行30分鐘電解拋光。接著於草酸中利用電壓50V進行兩天的陽極處理，得到直徑均90 nm具有良好奈米孔洞陣列之氧化鋁。第二步，將氧化鋁作為模板配合先前製備的Cu0.55Ge0.45過共晶合金塊材，在高溫攝氏750度下真空壓鑄成直徑90 nm的Cu0.55Ge0.45合金奈米線。綜合OM及XRD分析，得到Cu0.55Ge0.45合金塊材為Cu3Ge與Ge兩相共存的晶體結構。接著，為了比較Cu0.55Ge0.45合金奈米線退火前後之差異，將兩種樣品於SEM的微觀形態與EDS分析，驗證Cu0.55Ge0.45合金奈米線具有Cu與Ge元素不同分布的兩種段狀結構。且退火奈米線有更平整的分段界面。經TEM繞射分析，確認合金奈米線的兩分段分別為Cu3Ge與Ge的晶體結構，證明壓鑄法能夠成功實現與原合金塊材成份相同的奈米線，且內部的各相均屬於單晶結構。此外，在TEM的EDS分析中發現退火奈米線的Ge分段有更少的Cu含量。使得退火Cu0.55Ge0.45合金奈米線更加符合金屬/半導體的異質結構。

In this study, heterostructure Cu0.55Ge0.45 nanowires were fabricated by vacuum hydraulic pressure injection molding with anodic aluminum oxides (AAOs) template. First, in order to establish a mirror-like surface, high purity aluminum sheets (99.999%) were electropolished in the solution composed of perchloric acid (15%) - ethanol (70%) - monobutylether ethanol (HOCH2CH2OC4H9) (15%) at 40 V for 30 minutes. The electropolished specimens were anodized in oxalic acid at 50 V for two days, and then AAOs with nanopore array having a diameter of 90 nm were obtained. In the second step, via vacuum injection molding process, Cu0.55Ge0.45 hypereutectic alloy was heated to 750 °C and filled into AAO template. After removing AAO in etching solution, Cu0.55Ge0.45 nanowires with diameter of 90 nm were hence obtained. Based on OM and XRD results, the crystal structure of Cu0.55Ge0.45 bulk material is determined as Ge/Cu3Ge coexisting phases. Next, comparing Cu0.55Ge0.45 nanowires before and after annealing treatments, SEM and EDS results show that Ge and Cu elements tend to form Ge and Cu-Ge segments. TEM was further used to confirm two different segments of the nanowires are Cu3Ge and Ge, respectively. It was proved that vacuum injection molding process can be used to successfully multiple the original bulk material to nanowires, in which each segment is of single crystalline structure. It was found that the Ge segment of annealed nanowires had less copper content; thus, annealed Cu0.55Ge0.45 nanowires are closer to metal/semiconductor heterostructure.

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