二氧化錫(SnO2)是一種知名的n-type半導體其應用範圍非常廣泛，而其奈米線(nanowires)由於擁有一維奈米材料的特殊性質非常適合進行研究，本實驗的二氧化錫奈米線是藉由熱蒸鍍法(thermal vapor deposition method)來成長，為了避免奈米線的直徑分布不均，成長方式由VLS(vapor-liquid-solid)來控制直徑大小，利用熱蒸鍍法來成長奈米線會受到很多因素影響，所以本實驗對於這些因素包含：溫度、成長、時間、前驅物份量、壓力、前驅物與基板(成長區)距離和金膜厚度，做出一系列的對照實驗來歸類出這些因素對於奈米線之成長有何影響，並藉由這些參數的控制來長出所需要尺寸的奈米線，利用TEM, SEM, XRD, Raman, UV-Vis光譜進行材料檢測。再近一步的製作場效電晶體元件(FET)，利用黃光製程來進行元件製作，而所得元件其表現不輸給目前所發表論文上記載的元件。

Tin dioxide(SnO2) is well-know and useful n-type semiconductor. The SnO2 nanowires have the special property because of its one dimensional nanostructure. Therefore, SnO2 nanowires is worth to research. Tin dioxide nanowires were grown by the thermal vapor deposition method and vapor-liquid-solid mechanism were grown nanowires with uniform diameters, because Au catalyst can control diameter of nanowire. Many parameters would affect the growth of nanowire. These parameters include temperature (source area), flow rate, pressure, source mass, grow time, distance between the source, growth area and the thickness of gold films. The purpose of this study is to find the relationship between the nanowire’s growth and these parameters. Also, by controlling these parameters to grow the nanowires with specific size. Using the TEM, SEM, XRD, Raman, UV-Vis spectrum and CL spectrum to examine the structure and fabricating the FET device by photolithography process. The performance of un-doped single SnO2 nanowire device is comparable to literatures report.

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