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研究生: 李振瑋
Chen-Wei Lee
論文名稱: 探討鑄造銻化銦奈米線於熱電特性之研究
Study on the Thermoelectric Properties of Casting Indium Antimonide (InSb) Nanowires
指導教授: 陳士勛
Shih-Hsun Chen
口試委員: 陳洋元
Yang-Yuan Chen
沈育安
Yu-An Shen
曾堯宣
Yao-Hsuan Tseng
學位類別: 碩士
Master
系所名稱: 工程學院 - 機械工程系
Department of Mechanical Engineering
論文出版年: 2020
畢業學年度: 108
語文別: 中文
論文頁數: 108
中文關鍵詞: 銻化銦陽極氧化鋁真空壓鑄法奈米線熱電特性
外文關鍵詞: InSb, Anodic aluminum oxide, Injection molding process, Nanowires, Thermoelectric performance
相關次數: 點閱:257下載:10
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  • 本研究是將銻化銦 (InSb) 塊材利用陽極氧化鋁 (AAO) 模板輔助真空壓鑄法製備一維結構奈米線,再將單根奈米線製備成熱電量測元件,以量測其熱電性質。使用陽極氧化鋁奈米模板作為鑄造模具,將預先熔煉的 InSb 合金塊材,注入 AAO 模板中,以製備奈米線;移除模板後並進一步確認奈米線之表面形貌、晶體結構與成份分析。結果顯示奈米線的直徑受到 AAO 孔徑所控制,且奈米線的晶體結構與塊材相同,但每根奈米線成分有細微的差異。接著將塊材與單根奈米線進行熱電特性與電性量測比較,結果顯示在300 K 環境溫度下,塊材的電阻率、塞貝克係數、功率因子、熱傳導率以及熱電優值分別為30 µΩ-m、-260 µV/K、2205 µW/m-K2、15.6 W/m-K 及0.044,奈米線的電阻率、塞貝克係數、功率因子、熱傳導率以及熱電優值分別為390.6 µΩ-m、-55 µV/K、7.9 µW/m-K2、1.79 W/m-K 及0.00138。其電阻率比塊材大,因奈米線表層仍具有氧化層,使得功率因子無法較小。從合金塊材製備為奈米線,因使得奈米尺度的晶體缺陷將提高內部聲子的散射機率,以達到降低材料的熱傳導率。由於氧化層的影響,並改善電阻率過高之問題,使用反應離子蝕刻來將氬離子轟擊奈米線氧化層,並增加處理時間,使得奈米線電阻率下降。由於製備奈米線冷卻快速,而為了減少奈米線本身之缺陷進而做熱處理,使電阻率下降。


    In this study, the Indium Antimonide (InSb) bulk was fabricated into nanowires (NWs) with one-dimension structure by using vacuum injection molding process with the assistance of Anodic Aluminum Oxide (AAO) template. To evaluate the thermoelectric performance of nanoscale InSb, a single NW was then fabricated as a thermoelectric measuring component. By injecting the pre-melted InSb alloy individually into AAO template, NWs/AAO composite was obtained. In order to confirm the morphology, crystal structure and element composition of NWs, the AAO templates were removed to collect separated NWs. The analysis results showed that the diameter of NWs was similar to the pores size of AAO, and the crystal structure was also the same with bulk. The composition deviation between the bulk and NWs was resulted from non-uniform of element distribution in bulk alloy. As to thermoelectric properties, the resistivity, Seebeck coefficient, power factor, thermal conductivity and ZT value of the bulk alloy were 30 µΩ-m, -260 µV/K, 2205 µW/m-K2, 15.6 W/m-K and 0.044; while those were 390.6 µΩ-m, -55 µV/K, 7.9 µW/m-K2, 1.79 W/m-K and 0.00138 for NWs. The lower resistivity was resulted from the oxide shell formed during AAO removing process. The thermal conductivity would be decreased as the InSb bulk was nano-sized. In order to improve NWs resistivity, the Reactive-ion etching (RIE) processing time was increased, so that the resistivity was decreased. Furthermore, annealing process was carried out to eliminate the defects in NWs, which were caused by a rapid cooling rate while casting.

    摘要 I Abstract II 誌謝 III 目錄 IV 圖目錄 VII 表目錄 XI 第一章 前言 1 第二章 文獻回顧 5 2.1 熱電效應 5 2.1.1 塞貝克效應 5 2.1.2 帕爾帖效應 7 2.1.3 湯姆森效應 8 2.2 熱電性值 10 2.2.1 熱電優值 10 2.2.2 導電率 11 2.2.3塞貝克係數 13 2.2.4 功率因子 14 2.2.5 熱傳導率 15 2.3 影響熱電性質三大條件之關係 16 2.3.1 導電率和塞貝克係數的關係 16 2.3.2 導電率和熱傳導率的關係 16 2.4 熱電應用 18 2.4.1 熱電材料的選擇 19 2.4.2 銻化銦基本性質 20 2.5 奈米技術 22 2.5.1 奈米結構之特性 22 2.5.2 奈米線製備的方法 25 2.5.3 真空壓鑄法 26 2.6 陽極氧化鋁 28 2.6.1 鋁基材前處理 29 2.6.2 鋁陽極處理之反應機制 31 2.6.3 影響陽極氧化鋁之參數 33 2.7文獻回顧總結 37 第三章 實驗方法 38 3.1 實驗流程 38 3.1.1 製備陽極氧化鋁模板 39 3.1.2 真空熔煉製備銻化銦金屬塊材 44 3.1.3 真空壓鑄法 45 3.1.4 熱電元件製備 46 3.2 實驗參數 48 3.3 實驗儀器 51 3.3.1 場發射掃描式電子顯微鏡 51 3.3.2 能量色散X射線光譜儀 51 3.3.3 X光繞射儀 52 3.3.4 場發射穿透式電子顯微鏡 53 3.3.5 反應離子蝕刻系統 54 第四章 結果與討論 55 4.1 陽極氧化鋁模板 55 4.2 銻化銦塊材製備 59 4.3 銻化銦奈米線製備 61 4.4 銻化銦塊材及奈米線之熱電性質分析 69 4.4.1實驗量測技術及原理 69 4.4.2奈米線量測晶片之電路改善 70 4.4.3奈米線與塊材量測之結果 75 4.4.4改善奈米線之電阻率 79 第五章 結果與未來展望 84 5.1研究結果總結 84 5.2未來展望 85 參考文獻 86

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