本研究使用磁控式濺鍍，以石英玻璃作為底材，以反應式濺鍍沉積二氧化鈦及氮化鈦薄膜，其中氮化鈦薄膜再於大氣環境下500 ℃退火處理形成氮摻雜二氧化鈦薄膜。以二氧化鈦及氮摻雜二氧化鈦薄膜作為光觸媒之材料，二氧化鈦薄膜厚度為100 nm、氮摻雜二氧化鈦薄膜厚度為115 nm。另外在薄膜表面及底層沉積不同形貌的銀島嶼陣列，比較銀島嶼陣列對於光觸媒材料之影響。
二氧化鈦薄膜經XRD分析可得知為銳鈦礦相的結晶結構，經退火形成的氮摻雜二氧化鈦薄膜則為銳鈦礦相及金紅石相混合的結晶結構，由XPS分析得知氮摻雜的二氧化鈦薄膜有0.84 atom.%的氮。
光觸媒降解實驗以水銀燈作為降解亞甲基藍之光源，純二氧化鈦薄膜的反應速率為-0.081 hr-1，添加以功率10 W濺鍍3秒之銀陣列於二氧化鈦薄膜表面時反應速率為-0.112 hr-1；以功率20 W濺鍍3秒之銀陣列於二氧化鈦底部時反應速率為-0.102 hr-1。氮摻雜二氧化鈦薄膜的反應速率為-0.111 hr-1，銀陣列以功率10 W濺鍍3秒於表面反應速率可達-0.116 hr-1。
以相同材料系統製作紫外光光感測器於P型熱氧化矽基板上，以指叉圖案作為電極，當不添加任何銀陣列時，氮摻雜二氧化鈦薄膜的上升時間為28.03 s，下降時間為9.79 s；添加退火聚集之銀陣列時，上升時間縮短為10.13 ms，下降時間為0.87ms，但光暗電流比由813降至10.7。其他較連續的銀奈米島嶼結構則因半導體薄膜厚度太薄導致電流選擇流經試片底部的銀，導致通入5 V偏壓時銀陣列越密集的樣品，電流越大且光暗電流差值極小。

Titanium dioxide and titanium nitride were prepared by magnetron sputtering, and the titanium nitride film was annealed under atmosphere condition with 500 ℃ for 1 hour to form nitrogen-doped titanium dioxide film. The thickness of TiO2 thin film was 100 nm, and nitrogen-doped titanium dioxide was few nanometers thicker than 100 nm. The silver nano-island array was deposited above or under the photocatalyst thin film to compared how the silver nano-island array affect the photocatalyst efficiency.
The XRD analyst shows the titanium dioxide thin film was completely anatase phase, and the nitrogen-doped titanium dioxide was mixed by anatase and rutile phases. The XPS analyst shows there was 0.84 atom% nitrogen remaining after annealing the titanium nitride film.
A mercury lamp was used as the light source for methylene blue solution degradation. The reaction rate constant of pure titanium dioxide was -0.08 hr-1. While the silver nano-island array was deposit on the top of titanium dioxide film with sputtering power was 10 W for 3 s, the reaction rate constant was -0.112 hr-1. When silver was deposited with power 20 W for 3 s under titanium dioxide, the reaction rate constant was -0.102 hr-1. And the reaction rate constant of nitrogen-doped titanium dioxide was 0.111 hr-1, nitrogen-doped titanium dioxide with silver sample was -0.116 hr-1.
The same materials were prepared as UV-photodetector on p-type oxidized silicon, the silver interdigitated electrode was prepared by sputtering with finger mask, both the finger width and the spacing were 200 µm. While not adding any silver nano-island, the rise and fall time of nitrogen-doped titanium dioxide was 28.03 s and 9.79 s, after adding annealed silver nano-island under the nitrogen-doped titanium dioxide, the rise and fall time decrease to 10.13 ms and 0.87 ms. But the ratio of photo current to dark current also decrease from 813 to 10.7 .

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