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研究生： 彭展崢
Jhan-Jheng Peng
論文名稱： 使用濺鍍法成長矽奈米結構
The growth of silicon nanostructure by sputter technique
指導教授： 周賢鎧
Shyankay Jou
口試委員: 胡毅
Yi Hu
鄭偉鈞
Wei Cheng
學位類別： 碩士
Master
系所名稱： 工程學院 - 材料科學與工程系
Department of Materials Science and Engineering
論文出版年： 2007
畢業學年度： 95
語文別： 中文
論文頁數： 110
中文關鍵詞： 矽奈米錐 、矽奈米線 、濺鍍法
外文關鍵詞： silicon nanocones, silicon nanowires, sputtering
相關次數： 點閱：271  下載：2 
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  •  上一筆

    • 本論文研究的內容主要分成三個部分。第一部份是在矽基材上製備所需的金奈米顆粒分佈，本實驗是先利用鍍金機在基材上鍍上一層金的薄膜後，再藉由控制退火的溫度、時間和金薄膜的厚度，來完成金奈米顆粒的製備。
    實驗的第二部份是在石英管爐中藉由熱處理的過程，分別以不同的溫度、時間、氣氛與金膜厚度來成長矽奈米線，並藉由控制反應參數，來探討對成長矽奈米線之影響。實驗結果發現在金膜厚度為20mA 25sec的條件下，通入1000sccm流量的Ar和Ar-20%H2，並在950℃下成長30min，可得到密度最高、分佈性均勻的矽奈米線。
    實驗的第三部份是利用已製備好金奈米顆粒分佈的試片，以磁控式濺鍍法成長矽奈米結構，並藉由改變濺鍍功率、基材溫度、反應氣氛和金膜厚度等條件來探討這些反應參數對成長矽奈米結構的影響。當使用RF20W、Ar:H2 = 4:16 sccm、鍍膜壓力1.7x10-2 Torr與基材溫度450℃下，可以成功成長出矽奈米錐結構，本論文進一步使用掃瞄式電子顯微鏡觀察矽奈米錐的表面型態，並以光致發光光譜儀來量測矽奈米錐的發光性質。

    In this thesis, the study is mainly divided into three parts. The first part of study focuses on the fabrication of gold nanoparticles on silicon substrate. In this study, the gold film was deposited by sputtering. The formation of gold nanoparticles was controlled by annealing temperature, time and thickness of initial gold film.
    The second part of study focuses on annealing of gold-coated Si substrate in quartz furnace. The growth of silicon nanowires were controlled by different temperature, time, atmosphere and thickness of initial gold film, so as to probe into the growth of silicon nanowires. According to the result, the well distribution and high density of silicon nanowires were generated from the substrate with a gold film previously deposited with 20mA of sputtering current and 25sec duration. The flow rates of argon and argon with 20% hydrogen was 1000 sccm flow generating silicon nanowires, and the growth temperature and time are 950℃ and 30 minutes.
    The third part of study focuses on the fabrication of silicon nanocones by a RF sputter deposition technique. The growth of silicon nanocones were controlled by sputtering power, substrate temperature, atmosphere and thickness of initial gold film, so as to probe into the growth of silicon nanocones. A favorable condition for growing silicon nanocones was found with a sputtering power of 20 Watts, the gas flow of argon and hydrogen as 4 and 16 sccm, the sputtering pressure of 1.7x10-2 Torr, and substrate temperature of 450℃. The surface morphology was analyzed by SEM and the optical property has been studied by photoluminescence.

    第一章、前言……………………………………………………………1 第二章、實驗原理與文獻回顧…………………………………………2 2.1 矽奈米線的成長機制…………………………………………2 2.1.1 氣液固成長機制(Vapor-Liquid-Solid mechanism, VLS)…………………………………………………….3 2.1.2 氧化物輔助成長機制(oxide-assisted mechanism, OAG)…………………………………………………….6 2.1.3 固液固成長機制(Solid-Liquid-Solid mechanism, SLS)…………………………………………………….7 2.2 矽奈米線的製備方法…………………………………………8 2.2.1 化學氣相沉積法 ( Chemical Vapor Deposition, CVD)…………………………………………………….9 2.2.2 雷射熔融法……………………………………………12 2.2.3 蒸鍍法…………………………………………………14 2.2.4 熱退火…………………………………………………15 2.3 不連續分散性金之製備…………………………………….16 2.3.1 利用金奈米溶液形成奈米金粒子分佈………………17 2.3.2 利用退火形成奈米金-矽合金分佈………………….20 2.4 矽奈米錐之製備方法……………………………………….22 第三章、實驗步驟與方法…………………………………………….26 3.1 實驗用材料與藥品規格…………………………………….26 3.2 實驗儀器與裝置…………………………………………….27 3.2.1 磁控式濺鍍系統………………………………………27 3.2.2 熱處理用石英管爐……………………………………29 3.2.3 鍍金機…………………………………………………31 3.2.4 高溫爐…………………………………………………31 3.3 實驗步驟…………………………………………………….32 3.3.1 基材清洗流程…………………………………………32 3.3.2 奈米金顆粒試片之製備………………………………33 3.3.3 利用石英管爐成長矽奈米線之流程…………………36 3.3.4 利用磁控式濺鍍系統成長矽奈米錐之流程…………38 3.4 分析與鑑定………………………………………………….40 3.4.1 X-Ray繞射分析 (XRD)……………………………….40 3.4.2 掃瞄式電子顯微鏡 (Scanning Electron Microscope, SEM)……………………………………41 3.4.3 穿透式電子顯微鏡 (Transmission Electron Microscope, TEM)……42 3.4.4 光激發螢光光譜 (Photoluminescence spectra, PL)…………………43 第四章 結果與討論………………………………………………………………….46 4.1 不同退火溫度對製備奈米金顆粒之影響……………………………………….46 4.1.1 不同退火溫度對製備奈米金顆粒之影響…………………………………47 4.1.1.1 在矽基材上，600和650℃大氣下退火10min製備金奈米顆粒 之比較…………………………………………………………….47 4.1.1.2 在氧化矽基材上，600和650℃大氣下退火30min製備金奈米顆粒之比 較………………………………………………………………….49 4.1.2 不同退火時間對製備奈米金顆粒之影響…………………………………51 4.1.2.1 在矽基材上，600℃大氣下退火10和60min製備金奈米顆粒 之比較…………………………………………………………….51 4.1.2.2 在氧化矽基材上，650℃大氣下退火10和30min製備金奈米顆粒之比 較………………………………………………………………….53 4.1.3 不同鍍金時間對製備奈米金顆粒之影響…………………………………57 4.1.3.1 在矽與氧化矽基材上，650℃大氣下對不同厚度金膜退火10 min製備金奈 米顆粒之比較…………………………………………………….57 4.2 矽奈米線之製備與分析………………………………………………………….63 4.2.1 經由石英管爐利用熱處理成長矽奈米線可能成長機制之探討…………63 4.2.2 在不同熱處理溫度成長矽奈米線，探討溫度對成長矽奈米線之影響…64 4.2.3 在不同熱處理時間成長矽奈米線，探討時間對成長矽奈米線之影響…66 4.2.4 在不同熱處理氣氛成長矽奈米線，探討氣氛對成長矽奈米線之影響…68 4.2.5 用不同厚度金膜來成長矽奈米線，探討金膜厚度對矽奈米線之影響…70 4.2.6 矽奈米線之PL分析…………………………………………………………72 4.2.7 矽奈米線之TEM分析……………………………………………………….73 4.3 矽奈米錐之製備與分析………………………………………………………….80 4.3.1 利用磁控式濺鍍來成長矽奈米錐可能成長機制之探討…………………80 4.3.2 不同濺鍍功率對矽奈米錐成長之影響……………………………………81 4.3.3 不同濺鍍氣氛對矽奈米錐成長之影響－OES…………………………….90 4.3.4 不同基材溫度對矽奈米錐成長之影響……………………………………94 4.3.5 不同金奈米顆粒的分佈性與尺寸對矽奈米錐成長之影響………………96 4.3.6 利用金屬鈦做遮蔽層來觀察矽奈米錐之成長機制…………………….102 4.3.7 矽奈米錐之PL分析……………………………………………………….104 4.3.8 矽奈米錐之TEM分析………………………………………………………105 第五章 結論…………………………………………………………………………108 Reference…………………………………………………………………………….110 附錄

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