本研究藉由微波輔助法預先合成水相不含重金屬離子之AgInS2 (AIS)與AgInSe2 (AISe)量子點，反應時間僅需10分鐘，利用微波可瞬時升溫至反應溫度的特性，在定溫均勻受熱環境一步合成出量子點，不需再經配位體置換之表面改質，製程簡易且快速。
　　將TiO2光電極浸泡於量子點敏化溶液，接著用連續離子吸附與反應沉積ZnS鈍化層，分別與Cu2S或CuS背電極組裝成電池元件，使用AIS量子點之電池元件光電轉換效率為2.72% (Jsc = 9.75 mA/cm2, Voc = 432 mV, FF = 64.6%)，而使用L-Glutathione (GSH)做為包覆劑製成的AISe量子點並透過TiCl4化學沉積前處理程序之電池元件光電轉換效率達到5.68% (Jsc = 16.86 mA/cm2, Voc = 664 mV, FF = 50.8%)。將不同雙功能分子Thioglycolic acid (TGA)、Mercaptopropionic acid (MPA)與GSH做為包覆劑製成的AISe量子點電池元件進行電化學分析，證實以GSH所製備而成的AISe量子點與TiO2間有較長的電子生命週期與較短的電子傳遞時間，因此具有最佳的光電轉換效率。

　　In this study, we synthesized heavy metal-free AgInS2 (AIS) and AgInSe2 (AISe) quantum dots (QDs) via the microwave-assisted synthetic route within 10 min in an aqueous-phase system. Under microwave irradiation, precursor molecules directly absorb the microwave energy and heats up more efficiently. The synthesis process is simple, rapid and effective without further surface modification of ligand exchange.
　　The quantum dot-sensitized solar cells (QDSSCs) were constructed with QDs and co-adsorbent deposited on TiO2 film. ZnS deposited as passivation layer by successive ionic layer adsorption and reaction (SILAR). Counter electrode made from Cu2S or CuS components assembly with photoelectrode to become the cell component. The performance showed that AIS QDSSC had a power conversion efficiency of 2.72% (Jsc = 9.75 mA/cm2, Voc = 432 mV, FF = 64.6%) under full one sun irradiation (AM 1.5 G, 100 mW/cm2). Further, the performance showed that the GSH-capped AISe QDSSC with TiCl4 treatment exhibited an excellent power conversion efficiency of 5.68% (Jsc = 16.86 mA/cm2, Voc = 664 mV, FF = 50.8%) under full one sun irradiation. This is because GSH-capped AISe QDs allowed for more efficient electron transport and less charge recombination than did the TGA-capped AISe and MPA-capped AISe QDs, as revealed by the electrochemical impedance spectroscopy (EIS) and intensity-modulated photocurrent/photovoltage spectroscopy (IMPS/IMVS) measurements.

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