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研究生: 林家銘
Chia-Ming Lin
論文名稱: 整合實驗設計與AI人工智慧於半導體製程改善
Integrating Experimental Design and Artificial Intelligent for Improving Semiconductor Processes
指導教授: 呂永和
Yungho Leu
口試委員: 楊維寧
Wei-Ning Yang
陳郁堂
Yie-Tarng Chen
陳雲岫
Yun-Shiow Chen
葉耀明
Yao-Ming Yeh
學位類別: 博士
Doctor
系所名稱: 管理學院 - 資訊管理系
Department of Information Management
論文出版年: 2021
畢業學年度: 109
語文別: 英文
論文頁數: 67
中文關鍵詞: 半導體實驗設計AI人工智慧類神經網路基因演算法
外文關鍵詞: Semiconductor, Experimental design, Artificial intelligence, Neural network, Genetic algorithm
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  • AI人工智慧目前廣為學術單位及企業使用。AI人工智慧在使用過程,常須搭配大數據以進行建模預測。實務上,企業欲解決的問題不一定都有大數據可供使用。例如,為因應消費型電子之市場需求,半導體企業常需開發領先市場之新產品。此種領先市場之新產品開發過程,經常沒有相關之歷史數據可供建模預測。若為了使用大數據來建立模型以改善產品品質,則企業需進行大量實驗來收集數據。大量實驗對企業造成額外成本支出,也不一定可以找出關鍵控制因子,進而導致模型之預測能力不佳。
    半導體企業對於產品品質之要求非常嚴謹,若因品質問題影響產品之出貨時間,則會嚴重影響產品之市占率。所以要如何快速的提升產品品質為一重要之研究課題。許多企業在產品改善過程中,因為沒有太多的數據可供參考分析,所以常利用試誤法進行品質改善。但試誤法常找不到最佳的因子設定條件。更重要的是花費了大量的實驗成本,也拉長了改善時間。
    本文提出一個整合實驗設計(部分因子實驗、反應曲面法、田口方法…)與人工智慧(類神經網路、基因演算法…)之改善方法。此方法協助個案公司快速且有效地收集產品數據、篩選關鍵屬性與建立一個預測模型以改善DRAM產品之W結構厚度偏差及DRAM產品之CoSi2阻值變異。在應用此方法之後,DRAM產品之W結構之厚度變異從45.0 Å減少到了12.9 Å而CoSi2阻值變異也從1.440 ohms減少到0.302 ohms。


    Artificial intelligence (AI) is widely used by academic institutions and enterprises. In using artificial intelligence, it is necessary to use big data for modeling and predicting. In practice, big data is not always available for the problems that enterprises want to improve. For example, in response to the market request for consumer electronics, semiconductor enterprises often develop new advanced products in the market. In the market-leading new product development process, there is often no relevant historical data for modeling and predicting. If enterprises want to use big data to construct models to improve product quality, construct need to perform a lot of experiments to collect data. A large number of experiments have caused additional costs for the enterprises, and it may not find the key control factors, which leads to the poor prediction of the model.
    Semiconductor companies have very strict requirements for product quality. If quality problems affect the shipping schedule, it will seriously affect the product's market share. Therefore, how to quickly improve the quality of products is an important study topic. During the product improvement, many companies use trial and error to improve product quality because there is not big data for reference. But the trial and error method often fails to find the best setting of the control factors. More importantly, a lot of experimental costs were spent, which also delayed the improvement schedule.
    This thesis proposed an improvement approach that integrates experimental design (e.g. fractional factorial design, response surface method, Taguchi’s method…) and artificial intelligence (e.g. neural networks, genetic algorithms...). The proposed approach helps case companies to collect data, select important control factors, and construct a prediction model for reducing the W-shaped structure thickness deviation and the CoSi2 resistance variation of DRAM products. After applying the proposed approach, the average thickness variation of the W-shaped structure is reduced from 45.0 Å to 12.9 Å, and the CoSi2 resistance variation of DRAM products is reduced from 1.440 ohms to 0.302 ohms.

    中文摘要 IV Abstract V 誌謝 VI List of Figures IX List of Tables XI Chapter 1 Introduction 1 1.1 Overview 1 1.2 Research motivations 1 1.3 Research objectives 2 1.4 Organization 3 Chapter 2 Related Research 4 2.1 Fractional factorial design 4 2.2 Response Surface Method 4 2.3 Taguchi’s method 6 2.4 Artificial Neural Networks 8 2.5 Genetic Algorithms 10 2.6 Manufacturing processes of DRAMs 12 Chapter 3 Proposed approach 14 Chapter 4 Reducing Thickness Deviations of W-shaped Structures in Manufacturing DRAM Products Using RSM and ANN_GA 15 4.1 The problem 15 4.2 Proposed methods of experimental design and artificial intelligence 18 4.3 Experiment 19 4.3.1 Using fractional factorial design to select important control factors 19 4.3.2 Using center-point experiment to determine the existence of curvature 22 4.3.3 Using the gradient descent to find the region containing the best setting of the control factors 25 4.3.4 Using RSM to collect data and find the second-order best setting of the control factors 26 4.3.5 Using ANN to model the relationship of the control factors and the thickness deviations 32 4.3.6 Using GA to determine the best setting of the control factors 34 4.3.7 Executing confirmation experiments 35 Chapter 5 Applying Taguchi’s Method, Artificial Neural Network and Genetic Algorithm to Reducing the CoSi2 Resistance Deviations of DRAM Products 36 5.1 The problem 36 5.2 Proposed methods of experimental design and artificial intelligence 38 5.3 Experiment 39 5.3.1 Using Taguchi’s method to screen key control factors 39 5.3.2 Using Taguchi’s method to collect data and to find the local best setting of the control factors 41 5.3.3 Using a multilayer perceptron to predict the DRAM CoSi2 resistance 46 5.3.4 Using GA to find the best setting of the control factors 47 5.3.5 Executing the Confirmation Experiments 49 Chapter 6 Conclusion 50 References 51 Published Work 55

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