本論文分為兩部分，第一部分探討不同氮氣流量下成長之氮化鋁，其晶粒大小對漏電流的影響。第二部分探討探討不同厚度的氮化鋁鈍化層，其等效固定電荷 Qeff、絕緣層陷阱電荷密度Not 以及介面缺陷密度Dit 對少數載子生命週期的影響。研究發現，N2/Ar為2/20時成長之氮化鋁，其晶粒大小為 24.6 nm，小於其他氮氣流率之晶粒大小(~32 nm)，將氮氣流率為 2 與 16 sccm 之氮化鋁製作成MIS 元件後，從電流電壓量測中發現，氮氣流率為 2 sccm 之氮化鋁其漏電流密度為 4.26×10^-5 A/cm^2 ，大於氮氣流率為 16 sccm 之氮化鋁(8.52×10^-6 A/cm^2 )，因此較小的晶粒大小由於其漏電流路徑較短，漏電流較大。接著利用電容電壓以及2電導法分析氮化鋁層厚度 16、48 及 80 nm 之 MISCAP，由於 16 nm 之試片其漏電流嚴重，造成電容分析上的困難。從氮化鋁層厚度 48 及 80 nm 之試片，由於較高的介面缺陷密度與絕緣層陷阱電荷密度，其少數載子生命週期均較裸n 型矽基板低。而 16 nm 之氮化鋁試片等效固定電荷較高(2.61×10^12 cm^-2 )，其少數載子生命週期高於 48 nm 之氮化鋁試片。

There are two parts in the study. First, deposit the AlN layers in different N 2 flow rate and analyzing the leakage current density between grain size and N2 flow rate. Second, analyzing the effective fixed charge (Qeff ), insulator layers trap charge density (Not) and interface trap density (Dit ) of different AlN layers thickness. Then, discusses the minority carrier lifetime influencing by the Qeff , Not , and Dit . We observe that the grain size of AlN layers sputtering with N 2 /Ar = 2/20 is about 24.6 nm, which is smaller than the others AlN layers with higher N 2 /Ar (~32 nm). Therefore, we chose the N2/Ar = 2/20 and N2/Ar = 16/20 as condition. By using I-V measurement, the leakage current density of AlN layers sputtering with N2 /Ar = 2/20 is about 4.26×10^-5 A/cm^2 which is higher than the AlN layers with N2/Ar = 16/20 (8.52×10^-6 A/cm^2 ). We speculate that the smaller grain size is, the shorter leakage current path will be. Base on the result of N2 flow rate, we fabricate AlN MISCAP with N2/Ar = 16/20 in different AlN layers thickness 16, 48, 80 nm then analyzing by I-V, C-V, and conductance method. Due to the high leakage current of 16 nm AlN layers sample, the C-V characteristic is difficult to analyze. For the sample with AlN 48 and 80 nm, the minority carrier lifetime both lower than bare n-Si. We speculate that a high density of Dit and Not at interface and in AlN layers causing carrier trapped by the defect, thus, decreasing the minority carrier lifetime. On the other hand, the minority carrier lifetime of the sample with AlN 48 nm is higher than the sample with AlN 80 nm by the higher Qeff (2.61×10^12 cm^-2 ).

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