本論文分為三部分，第一部分探討銅基金屬玻璃薄膜的基本性質分析，及氧化鋅奈米柱與奈米管結構之紫外光感測器；第二部分探討不同厚度的銅基金屬玻璃薄膜在氧化鋅奈米結構表面上之紫外光感測催化影響，並進行物性與電性分析；第三部分探討不同厚度的銅基金屬玻璃薄膜在氧化鋅奈米結構底層之修飾影響，並進行物性與電性分析，藉由接面所產生的内建電場改善光感測器的效能。
研究發現，氧化鋅奈米管較氧化鋅奈米柱擁有較大的比表面積與空乏區，進而使紫外光感測器之訊雜比提升，其紫外光亮暗響應從252.8提升至2.03×103。在氧化鋅奈米結構表面濺鍍銅基金屬玻璃薄膜可以使其界面產生蕭特基能障接面，進而降低暗電流；且由米氏散射理論計算結果顯示，奈米粒子的散射與吸收強度趨勢為一致的，在表面電漿共振時，當銅基金屬玻璃薄膜及氧化鋅奈米材料的共振波段重疊時，能大幅提升光的吸收，當光入射於銅基金屬玻璃薄膜時，可以提升光行走路徑，但也因銅基金屬玻璃薄膜的覆蓋，部分的光被金屬所吸收，使得光被侷限於界面處，導致光電流下降，但整體光電流下降幅度較暗電流下降幅度來的小，因而訊雜比提升，銅基金屬玻璃薄膜/氧化鋅奈米柱之紫外光亮暗響應為6.72×103，銅基金屬玻璃薄膜/氧化鋅奈米管之紫外光亮暗響應為7.1×103。因此，將銅基金屬玻璃薄膜置於氧化鋅奈米結構底層，利用蕭特基能障接面，大幅度降低暗電流且不影響光電流，因而有效地提升訊雜比，氧化鋅奈米柱/銅基金屬玻璃薄膜之紫外光亮暗響應為9.16×103，氧化鋅奈米管/銅基金屬玻璃薄膜之紫外光亮暗響應為1.99×104。最後，藉由退火改變銅基金屬玻璃薄膜的特性之後成長氧化鋅奈米結構，與氧化鋅奈米柱相比，可以提升近800倍之訊雜比，氧化鋅奈米柱/退火150°C銅基金屬玻璃薄膜之紫外光亮暗響應為2.45×104，氧化鋅奈米管/退火150°C銅基金屬玻璃薄膜之紫外光亮暗響應為2×105。

UV photodetectors are desirable to detect the UV radiation level that can affect the human body, also it is utilized in multiple areas such as industrial, army, ecological and biological applications. ZnO materials based UV devices have fascinated extensive attention due to their easy synthesized method, and attractive optical and electrical properties. However, recently the performance of ZnO based photodetectors (PDs) behaviors significantly depends on their hybrid combinations that overcome the poor performance of bare ZnO based devices. In order to improve the ZnO based UV device properties, herein we fabricated UV PDs using ZnO and metallic glass thin films (TFMG). Initially, we have systematically analyzed the basic properties of Cu-based TFMG (Cu-TFMG) and ZnO materials based UV PDs. It was found that ZnO nanotubes (ZnTs) have larger specific surface area and depletion width than ZnO nanorods (ZnRs), therefore the IPhoto/IDark ratio of the UV PDs is increased from 252.8 to 2.03×103. Later, the Cu-TFMG were coated on ZnO nanostructures with different thickness, 3nm, 6nm, 10nm and 15nm respectively. The Cu-TFMG on ZnO nanotubes (ZnTs) based UV photodetectors exhibit better the IPhoto/IDark ratio (7.11×103) than Cu-TFMG on ZNRs (6.72×103).
Furthermore, the effects of different thicknesses of Cu-TFMG under the ZnO nanostructures are investigated thoroughly. The IPhoto/IDark ratio of ZnRs/Cu-TFMG is 9.16×103, and it is interesting that the IPhoto/IDark ratio of ZnTs/Cu-TFMG is increased excellently upto 1.99×104. On the other hand, the properties of ZnO/Cu-TFMG are improved by simple annealing and IPhoto/IDark ratios are increase overwhelmingly. The IPhoto/IDark ratio of ZnRs/TFMG (150°C) is 2.45×104 and the IPhoto/IDark ratio of ZnTs/Cu-TFMG (150°C) is 2×105, which is nearly 800 times better than as grown ZnRs. It is believed that the sputtering Cu-TFMG with ZnO nanostructures can form a Schottky barrier junction at the interface, thereby reducing dark current. When the light is incident on the ZnTs/Cu-TFMG, it is possible to increase the light path and increase the photoresponse excellently. However, when UV apply on Cu-TFMG/ZnTs, light was absorbed by TFMG. So that light is confined at the interface, resulting in photo current decrease.
The ZnTs/Cu-TFMG combination is believed to be an outstanding combination for harvesting photons and creating electron–hole pairs. The proposed ZnTs/Cu-TFMG photodetectors exhibits excellent photoresponse and fast switching speed in the UV region, and is a new promising hybrid material for high-performance optoelectronic devices.

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