隨著半導體技術的發展，元件的尺寸持續微縮，使得對製程的要求更為精確、嚴格。在半導體退火製程多年的發展中，雷射退火展現出它的優勢，成為了現今半導體主流的退火方法。
本研究將以雷射退火為主軸，透過退火製程的參數調變，應用於絕緣閘雙極電晶體(Insulated Gate Bipolar Transistor , IGBT)的BGBM(Backside Grinding & Backside Metallization)製程中。研究中透過離子佈植，將矽晶圓植入硼元素，然後針對雷射功率密度、延遲時間和雷射重疊率等關鍵參數進行實驗，並探討這些參數對矽晶圓表面性質、片電阻值與均勻性的影響。實驗結果發現，適度提高功率密度有助於提升摻雜物質的活化效率，但過高則會導致晶圓表面粗糙度增加甚至產生裂紋；延遲時間和重疊率的調變對活化效果的影響則取決於功率密度的設定，在較低功率密度下，適當延長延遲時間和增加重疊率能夠明顯改善均勻性和活化效率。本研究為IGBT製程中的雷射退火提供了數據，作為未來製程參數設定上的參考。

As semiconductor technology advances, continuous device scaling imposes more stringent and precise requirements on manufacturing processes. Among the various annealing processes developed over years, laser annealing demonstrates its advantages, becoming the mainstream annealing method in semiconductors.
This study focuses on laser annealing by modulating annealing parameters, applied to the Backside Grinding & Metallization (BGM) process for Insulated Gate Bipolar Transistors (IGBTs). Silicon wafers were implanted with boron through ion implantation. Experiments were then conducted to investigate the effects of key parameters - laser power density, delay time, and overlap rate - on wafer surface properties, sheet resistance, and uniformity. Results revealed that moderately increasing power density aids in enhancing dopant activation efficiency, but excessive power density leads to increased surface roughness and even cracking. The influences of delay time and overlap rate adjustments depended on the power density setting. At relatively lower densities, properly extending delay time and increasing overlap rate significantly improved uniformity and activation efficiency. This study provides data on laser annealing for the IGBT manufacturing process, serving as a reference for future process parameter optimization.

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