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研究生: 林官緯
Guan-Wei Lin
論文名稱: 高頻LLC串聯諧振轉換器之分數圈變壓器設計
Optimization Design of Fraction-Turns Transformer for High Frequency LLC Series Resonant Converters
指導教授: 邱煌仁
Huang-Jen Chiu
口試委員: 林景源
Jing-Yuan Lin
謝耀慶
Yao-Ching Hsieh
學位類別: 碩士
Master
系所名稱: 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年: 2018
畢業學年度: 106
語文別: 中文
論文頁數: 88
中文關鍵詞: LLC轉換器分數圈變壓器高功率密度
外文關鍵詞: LLC resonant converter, fraction-turns transformer, high power density
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  • 對於高降壓比、高輸出功率的LLC電路來說,主要的功率損失來自於二次側的繞組線損以及鐵損,且電路體積取決於磁芯的體積。為了達到高效率以及高功率密度的要求,分數圈繞組的變壓器結構相較於傳統繞組能夠降低輸出電流在繞組上的損耗。藉由各相的二次側繞組同時導通,藉此模擬傳統變壓器結構繞滿一圈的特性。本文利用模擬軟體Maxwell來驗證此變壓器結構以及電路動作的有效性,此變壓器基於LLC串聯諧振轉換器設計。最終成果為功率開關利用氮化鎵晶體,工作頻率操作於1MHz,工作電壓為380V輸入,12V輸出,輸出為1000W之電路,效率最高可以達到97%。


    For the high step-down LLC resonant converters with low voltage and high power output, main sources of power losses are copperloss of secondary side and coreloss, also the volume of magnetic component decided total capacity of circuits. Therefore, to achieve high efficiency and high power density, improving the magnetic element is an important issue. The fraction-turns transformer structure can reduce copper length of secondary side, through which can reduce the copper loss of transformer. Therefore, this thesis aims to analyze the availability of fraction-turns transformer structure design based-on LLC resonant converter using Maxwell software. Finally, a 1MHz, 380/12V, 1000W LLC resonant converter using gallium nitride (GaN) devices with a peak efficiency of 97% is achieved.

    摘 要 i Abstract ii 目錄 iv 圖索引 vi 表索引 ix 第一章 緒論 1 1.1研究動機與目的 1 1.2論文內容大綱 6 第二章 串聯諧振式轉換器原理 7 2.1半橋串聯諧振轉換器 7 2.2分數圈電路動作區間分析 20 第三章 氮化鎵元件介紹 26 3.1氮化鎵電晶體結構與特性 26 3.2雙脈波元件測試與選用 33 第四章 分數圈變壓器結構分析與設計 35 4.1鐵心設計與模擬分析 37 4.1.1鐵心參數化分析 39 4.1.2鐵損優化設計 45 4.2 Maxwell軟體模擬分析 51 第五章 實測驗證 61 5.1實測波形 63 5.2實測數據 68 5.3實體電路 71 第六章 結論與未來展望 72 6.1結論 72 6.2未來展望 73 參考文獻 74

    [1] C. Fei, F. C. Lee, and Q. Li, “High-efficiency high-power-density LLC converter with an integrated planar matrix transformer for high output current applications,” IEEE Trans. Ind. Electron., vol. PP, no.99, pp.1-1, Feb. 2017.
    [2] D. Huang, S. Ji, and F. C. Lee, “LLC resonant converter with matrix transformer, ” IEEE Trans. on Power Electron., vol. 29, no. 8, pp. 4339-4347, Aug. 2014.
    [3] Electric energy consumption. [Online]. Available:
    https://en.wikipedia.org/wiki/Electric_energy_consumption
    [4] International energy consumption. [Online]. Available:
    https://www.eia.gov/beta/international/analysis.cfm
    [5] Total Consumer Power Consumption Forecast. [Online]. Available:
    https://www.researchgate.net/publication/320225452_Total_Consumer_Power_Consumption_Forecast
    [6] Nuclear power plant. [Online]. Available:
    https://www.eia.gov/tools/faqs/faq.php?id=104&t=3
    [7] Efficient Power Conversion. (2013). Is it the End of the Road for Silicon in Power Conversion?[Online].Available:
    http://epc-co.com/epc/documents/producttraining/Appnote_Si_endofroad.pdf
    [8] B. Jayant Baliga , “Power semiconductor device figure of merit for high-frequency applications, IEEE Electron Device Letters, vol. 10, No. 10, pp. 455-457, Oct. 1989.
    [9] J. Kuzmik, “Power electronics on InAlN/(In)GaN: prospect for a record performance, ” IEEE Electron Device Lett., vol. 22, no. 11, pp. 510-512, Nov. 2001.
    [10] Z. Y. Liu, X. C. Huang, F. C. Lee, and Q. Li, “Simulation model development and verification for high voltage GaN HEMT in cascode structure,” in Proc. ECCE, 2013, pp. 3579-3586.
    [11] X. C. Huang, Z. Y. Liu, Q. Li, and F. C. Lee, ”Evaluation and application of 600V GaN HEMT in cascode structure,” in Proc. Applied Power Electronics Conference and Exposition (APEC), 2013, pp. 1279-1286.
    [12] Baocheng Wang, Ye Yuan, Yang Zhou, and Xiaofeng Sun, “Buck/boost bidirectional converter TCM control without zero-crossing detection,” in 2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), no. 2. IEEE, may 2016, pp. 3073–3078.
    [13] G. B. Koo, G. W. Moon, and M. J. Youn, “New zero-voltage-switching phase-shift full-bridge converter with low conduction losses,” IEEE Trans. Power Electron., vol. 52, no. 1,73 pp. 228-235, Feb. 2005.
    [14] R. Redl, N. O. Sokal, and L. Balogh, “A novel soft switching full bridge DC/DC converter: analysis, design considerations, and experimental results at 1.5 kW, 100 kHz,” in IEEE PESC Rec., vol. 6, no. 3, pp. 162-172, Jul. 1991.
    [15] B. Y. Chen and Y.-S. Lai, “Switching control technique of phase-shift controlled full-bridge converter to improve efficiency under light-load and standby conditions without additional auxiliary components,” IEEE Trans. Power Electron., vol. 25, no. 4, pp. 1001-1012, Apr. 2010.
    [16] B. Yang, F. C. Lee, A. J. Zhang, and G. Huang, “LLC resonant converter for front end DC/DC conversion,” in Proc. IEEE APEC, 2002, pp. 1108-1112.
    [17] B. Yang, Y. Ren, and F. C. Lee, “Integrated magnetic for LLC resonant converter,” in Proc. IEEE APEC, 2002, pp. 346-351.
    [18] Bo Yang, “Topology investigation for front end DC/DC power conversion for distributed power system,” Ph.D. dissertation, Dept. ECE, Virginia Tech, Blacksburg, VA, USA, 2003, pp.66-90.
    [19] C. Yan, F. Li, J. Zeng, T. Liu, J. Ying, "A novel transformer structure for high power high frequency converter", Proc. IEEE PESC 2007, pp. 940-947.
    [20] D. Fu, F. C. Lee, Shuo Wang, "Investigation on transformer design of high frequency high efficiency dc–dc converters", Proc. IEEE APEC 2010, pp. 940-947.
    [21] M. H. Ahmed, C. Fei, F. C. Lee, Q., Li, "48 V voltage regulator module with PCB winding matrix transformer for future data centers", IEEE Trans. Ind. Electron.
    [22] Jerry L. Hudgins, Grigory S. Simin, Enrico Santi, and M. Asif Khan,“An Assessment of Wide Bandgap Semiconductors for Power Devices, “IEEE Transaction on Power Electronics, Vol. 18, No. 3, pp. 907-914, 2003.
    [23] H. Amanoet al. “Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer” Jpn. J. Appl. Phys. 29, L205 (1990).
    [24] W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda, I. Omura, "Recessed-gate structure approach toward normally off high-voltage AlGaN/GaN HEMT for power electronics applications", IEEE Trans. Electron Devices, vol. 53, no. 2, pp. 356-362, Feb. 2006.
    [25] G. Perica, "Elimination of leakage effects related to the use of windings with fractions of turns", IEEE Trans. Power Electron., vol. PE-1, no. 1, pp. 39-47, Jan. 1986.
    [26] L. H. Dixon Jr, "How to design a transformer With fractional turns," Unitrode Power Supply Design Seminar, SEM-500, Power Supply Design Seminar Manual, pp. 4.1-4.8, 1985.
    [27] S. Li, E. Rong, Q. Min, S. Lu. "A Half-turn Transformer with Symmetry Magnetic Flux for High-frequency Isolated DC/DC Converters," in IEEE Transactions on Power Electronics, Accepted.
    [28] Akopian, N., Vardi, A., Bahir, G., Garber, V., Ehrenfreund, E., Gershoni, D., Poblenz, C., et al. (2009). Fermi edge singularity observed in GaN/AlGaN heterointerfaces. Applied Physics Letters, 94(22), 223502.

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