此研究以反應式離子束濺鍍法於SiO2/Si基版及石英基板上沉積氧化銅/氧化亞銅薄膜，探討氬/氧流量及基板溫度對所沉積氧化銅/氧化亞銅薄膜之影響。研究結果顯示在300℃或400℃所沉積之氧化銅/氧化亞銅薄膜有相同的趨勢，當氬氧比例為2:1時，會得到多晶CuO薄膜，薄膜表面平整。當氧氣部分流量3:1至4:1時，會形成混相的CuO及Cu2O薄膜。當氬氧比例為5:1至7:1時，會得結晶性佳且表面平整的多晶Cu2O薄膜。在氬氧比例8:1以上時，會形成Cu及Cu2O的薄膜，並於薄膜表面成長出柱狀Cu2O結構，推測是因氧氣的缺乏，導致Cu的過量，使得Cu成為成核點，因而形成柱狀Cu2O結構。實驗所得之CuO薄膜為間接能隙半導體，能隙約為1.36 eV，而Cu2O薄膜為直接能隙半導體，能隙約為2.46 eV，CuO薄膜電阻率大於18000 ohmic-cm而Cu2O薄膜電阻率為5000 ohmic-cm。

Copper oxide (CuO) and cuprous oxide (Cu2O) have been successfully deposited by reactive ion beam sputter deposition at 300 ~ 400℃ with argon (Ar) to oxygen (O2) ratio from 2:1 ~ 14:1. Experimental results show that with an Ar:O2 ratio of 2:1, single phase polycrystalline CuO thin films are obtained. As the Ar:O2 ratio reaches 3:1 ~ 4:1 , mixed CuO and Cu2O are found. Further increasing Ar:O2 ratio to 5:1 ~ 7:1 results in single phase polycrystalline Cu2O. As Ar:O2 reaches 8:1 and higher, the thin film is composed of mixed Cu2O and Cu covered with Cu2O nanorods. CuO thin film exhibits an indirect bandgap of 1.36 eV, while the Cu2O shows a direct bandgap of 2.46 eV. The resistivity of CuO and Cu2O deposited at 400oC were >18000 ohmic-cm and 5000 ohmic-cm, respectively. The formation of the Cu2O nanrod at high argon partial flow rate may due to the presence of excess copper that act as nucleation sites.

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