本研究旨透過整合電腦積層拋光墊形貌模型(Computed Additive Pad Topography, CAPT)建立軟式複合墊3D模型，並藉由3D模型模擬拋光墊Asperity特徵參數，參數包含接觸面積、半徑和壓縮高度等，這些特徵參數將被應用於材料移除率預測模型，預測化學機械拋光製程時薄膜晶圓的材料移除率，選出符合圖案化晶圓最佳拋光選擇比參數，滿足圖案化晶圓達到最終製程目標銅柱凹陷階高4 nm和表面粗糙度(Ra) 5 nm以下，因此將使用軟式複合墊搭配鹼性拋光液(D3586)對奈米雙晶銅圖案化晶圓進行矽導微孔拋光實驗分析。實驗將分成3個階段進行，第一階段，使用軟式複合墊分別對奈米雙晶銅與二氧化矽薄膜晶圓進行拋光實驗，並使用材料移除率預測模型與實際值進行誤差比對，奈米雙晶銅薄膜晶圓最小誤差為3.68 %，誤差最大為8.91 %。二氧化矽薄膜晶圓最小誤差為3.13 %，最大誤差為7.90 %，誤差皆小於Preston’s Equation計算出的最大誤差19.35 % 和19.50 %。第二階段，比較2款不同拋光墊微結構和性能對2款不同晶圓拋光結果的影響。最後針對軟式複合墊對於2款不同晶圓拋光結果，選出下壓力1 psi和轉速40/30 rpm做為第三階段圖案晶圓最佳選擇比拋光參數。第三階段，使用1 psi和40/30 rpm搭配軟式複合墊對圖案化晶圓進行拋光實驗，拋光結果凹陷階高值為2.08 nm，表面粗糙度(Ra) 1.24 nm，證實拋光參數能符合製程最終標準，同時使用此拋光參數對軟拋墊進行測試，拋光結果凹陷階高值為4.45 nm，表面粗糙度(Ra) 1.91 nm，結果趨勢符合第二階段測試結果，最後，將利用此拋光參數進行15次小型馬拉松實驗，驗證其參數的穩定性，同時搭配動態量測結果得知圖案化晶圓銅柱與拋光墊相關性，凹陷階高和拋光墊Rpk具有高相關性(0.96)、表面粗糙度和拋光墊Ra有高相關性(1.00)。

This study aims to develop a 3D model of the soft composite pad using CAPT. The model simulates the asperity characteristics of the pad. These parameters are then used in a material removal rate prediction model to estimate the removal rate of the thin film wafer in CMP process. The goal is to achieve a final process target of 4 nm dishing depth and surface roughness (Ra) below 5 nm on Nanotwinned copper pattern wafers. To achieve this, a soft composite pad with an alkaline slurry (D3586) are used for TSV CMP on Nanotwinned copper pattern wafers. In the first stage, errors in material removal rate prediction are evaluated for Nanotwinned copper coupon wafers. the minimum error is 3.68%, and the maximum error is 8.91%. For the silicon dioxide coupon wafer, the minimum error is 3.13%, and the maximum error is 7.90%. The second stage compares the effects of different pad microstructures and performances on the polishing results of the two wafers, using a soft polishing pad with a downward pressure of 1 psi and a rotational speed of 40/30 rpm. The third stage involves polishing pattern wafers using the soft polishing pad with the same parameters. The results show a step height of 2.08 nm and surface roughness (Ra) of 1.24 nm. Furthermore, the soft polishing pad is tested with these parameters, resulting in a step height of 4.45 nm and surface roughness (Ra) of 1.91 nm, which align with the trends observed in the second stage. Finally, the stability of the parameters is verified through 15 mini marathon experiments Simultaneously, in conjunction with the results of dynamic measurements. The dishing showed a high correlation with the polishing pad of Rpk value (0.96), and the surface roughness exhibited a high correlation with the polishing pad of Ra value (1.00).

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