本研究論文是針對以化學氣相傳導法(CVT)長成之三六族層狀二維硒硫化鎵半導體GaSe1-xSx (0≤x≤1)，以及利用垂直布里曼法(vertical Bridgman method)長成之三六族層狀硒化鎵半導體GaSe之光學特性加以研究與探討。特別是對於層狀硒化鎵半導體GaSe晶體進行物理性彎曲，由光激螢光量測確認此層狀化合物半導體在物理性彎曲狀態下，其螢光強度都比平面狀態增強且發光波長改變。
本研究自行研發設計曲率控制平台，能將待測樣品從平面狀態調整到所要的曲率；經查詢目前文獻資料，本研究為第一個在室溫下將硒化鎵層狀半導體GaSe由平面狀態逐漸彎曲，進行不同曲率之光激螢光實驗，並推導出硒化鎵層狀半導體GaSe之光激螢光強度與曲率之關係方程式，以及晶體能隙與曲率之關係方程式，可作為未來深入研究之基礎。另外，針對半導體硒化鎵GaSe光激螢光強度實驗發現：曲面之螢光強度大於平面之螢光強度，本研究提出可能的2個螢光發光增強機制：
(1) 由硒化鎵實驗數據推導出因為曲面受光面積增加之線性機制。
(2) 晶體彎曲導致表面原子間距增大，增加入射光之非線性機制。
針對層狀二維硒硫化鎵半導體GaSe1-xSx (0≤x≤1)之光電特性，本研究依據光激螢光(PL)、拉曼量測(Raman)、以及熱調制(TR)光譜之實驗結果，探討不同溫度下各種激子之特性，以及因晶體中層狀堆疊位置相異產生之結構相變，再利用時間解析光激螢光(TRPL)進行發光複合時間常數研究；研究結果顯示化合物中硒、硫摻雜比例不同將導致能隙位移現象，藉由硒、硫成分變化可產生不同的光激螢光發光波長，可用來建構可見光全波段頻譜並混成白色可見光，有利於後續開發 GaSe1-xSx (0≤x≤1)在可見光波段之二維光電元件應用。

This dissertation explores the optical characteristics of III-VI semiconductors. The III-VI layered semiconductor is a topic that is frequently discussed and is highly pertinent to optical and electronic devices due to its attractive properties. The light emission properties of layered gallium selenide (GaSe) crystals with varying curvatures through bending photoluminescence (BPL) experiments were observed. A customized sample holder enables controlled upward bending, and results show curvature-dependent changes in both bandgaps and BPL intensities. Two possible mechanisms were proposed for this phenomenon:
(1) The linear mechanism: The light-irradiated area is linearly increased because of the curved surface caused by bending. It can be deduced from the experimental data.
(2) The nonlinear mechanism: The mutual distances of atoms on the surface of a crystal are increased while bending the crystal; therefore, the bent crystal receives more photons.
The main emission peak shifts from 2.005 eV (flat) to 1.986 eV (maximum bending), indicating c-plane lattice expansion. The BPL peak intensities increase with curvature, correlating with the light-irradiated area and bond-angle widening. Analysis of lattice constant versus emission energies suggests potential applications in flexible light-emission devices.
Furthermore, full-series GaSe1-xSx (0≤x≤1) multilayers grown using the CVT method reveal near-band-edge emissions from red to green and blue colors through photoluminescence (PL) experiment at 4 K. X-ray diffraction and Raman measurements confirm ε-β polymorph stacking phases. Micro-photoluminescence (μPL) reveals the ε-stacked phase as crucial for direct recombination and free exciton emission. A mixed-color white light is generated and positioned at the CIE center. Time-resolved photoluminescence (TRPL) mapping indicates increased photoluminescence decay lifetime with higher sulfur content, attributed to mixed-phase stacking faults near β-GaS. The GaSe1-xSx series is a versatile 2D chalcogenide for full-color visible light emission. These studies propose excellent optical characteristics of III-VI layered semiconductors that can be promising candidates for exploration in optoelectronic applications.

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