鎂及其合金近年來由於其優越的機械性質、回收再利用性佳，符合業界量產製程經濟效益之需求，使之成為常用之結構材料。然而鎂及其合金在大氣環境下耐蝕性較差，導致應用於室外或人體環境上的限制，其製品也因此而降低安全係數，使得於海事應用上仍有顧慮，侷限未來發展。
因此本研究使用常壓電漿噴射束沉積氧化矽薄膜於AZ91D鎂合金，探討當改變前驅物載氣流量對於薄膜物理與化學性質之影響，並使用電化學量測驗證薄膜耐蝕性。本製程結合常壓電漿處理時間快速、製程乾淨，也無須耗費高成本添置與維護真空設備等優點，與二氧化矽優異之光電性質，沉積無機氧化矽透明薄膜於鎂合金基材，藉以提升鎂合金之耐蝕能力，希望未來可以拓展鎂合金之的應用範圍。
研究結果顯示，氧化矽薄膜的表面自由能較原始AZ91D下降且非極性力佔有較大比重，顯示為不易吸附水氣之疏水膜，薄膜時效性至少維持56天。氧化矽薄膜之表面形貌經由SEM影像顯示表面平坦均勻，由奈米級氧化矽顆粒組成，隨載氣流量增加顆粒間交連越加緻密。由AES與ESCA證實氧化矽薄膜內部不含碳，氧矽比非常接近2.0為氧化矽無機薄膜，且由AES縱深分析得知薄膜厚度由45~99奈米不等，薄膜厚度不與載氣流量增加而呈現性變化。從APPJ鍍膜過程可以觀察到載氣流率對鍍膜品質的影響：當前驅物濃度較高時，電漿灰化現象顯著，導致沉積率下降。FT-IR官能基鑑別中發現Si-O-Si- cage 結構對於薄膜孔隙度有相當大的影響，判斷為其影響薄膜耐蝕性的關鍵。最後由電化學極化曲線量測氧化矽薄膜之腐蝕行為，可以發現隨著載氣流量增加，氧化矽薄膜之腐蝕電位提高、腐蝕電流密度降低，增強鎂合金基材之耐蝕性。其中以O1800有最佳耐蝕性，與AZ91D鎂合金(Ecorr= -1.46 V(Ag/AgCl), Icorr= 22.06 μA/cm2)相比，腐蝕電位明顯提升(Ecorr= -1.28 V(Ag/AgCl))、腐蝕電流顯著下降(Icorr= 1.24 μA/cm2)，證實以常壓電機噴射束沉積氧化矽薄膜於AZ91D鎂合金上有良好的耐腐蝕效果，利於延長鎂合金製品之使用壽命，有望拓展鎂合金之應用範圍。

Magnesium alloys are used in many industries because of their excellent mechanical properties. Their high strength/weight ratio and excellent machinability make magnesium alloys ideal construction materials. In addition, the high recyclability of magnesium makes it very cost-effective for use in industrial manufacturing. However, poor corrosion resistance restricts the applications of magnesium and its alloys in marine environments and in biological applications. The ability to increase the corrosion resistance of magnesium and its alloys is crucial to increase the range of applications.
This research aims to overcome this drawback by increasing corrosion resistance. We deposited silicon oxide (SiOx) thin film as an anticorrosion layer using atmospheric pressure plasma jet (APPJ) on AZ91D magnesium alloys. This process combines the benefits of the APPJ process and SiOx thin film. With a high deposition rate and clean dry process, the APPJ process is an excellent candidate for surface coating treatment.
The results show that after ageing the SiOx thin films for at least 56 days, the SFE(surface free energy) of deposited SiOx thin films was lower compared to AZ91D alloy, and this resulted in a more hydrophobic surface, which helped to prevent corrosion. The surface morphologies of SiOx thin films were uniformly smooth and consisted of nano-scale silicon oxide particles, which agglomerated more closely with increasing O2 carrier gas flow rate. According to the results of ESCA and AES, the thin films were demonstrated to be carbon-free inorganic SiOx thin films and the O/Si ratio was extremely close to 2.0. From the AES depth profile, the thickness of the SiOx thin films ranged from 45 to 99 nm. The thickness was not directly proportional to the O2 carrier gas flow rate and this was attributed to the lack of energy such that the dissociation of the precursor monomer was inadequate, i.e. in the power deficient regime. The functional groups identified from FT-IR revealed that the degree of porosity of SiOx thin films depended on the cage structure, and this affected the corrosion resistance of SiOx thin films. The carrier gas flow rate evidently affected the quality of SiOX thin films in the APPJ process: 1. monomer deficient regime at lower carrier gas flow rate resulted in a hydrophilic surface; 2. power deficient regime at higher carrier gas flow rate resulted in a lower deposition rate. After corrosion measurement by potentiodynamic polarization tests in 3.5 wt% NaCl solution, the deposited SiOx thin film (O1800) revealed superior corrosion resistance in terms of corrosion potential (Ecorr= -1.28 V(Ag/AgCl)) and corrosion current (Icorr = 1.24 μA/cm2) compared to the AZ91D alloy (Ecorr= -1.46 V(Ag/AgCl), Icorr = 22.06 μA/cm2).

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