曝光微影技術是印刷電路板(printed circuit board, PCB)製程中的重要技術之一，近年來製程中對精密度要求不斷提高，並要求更高解析度更小的線寬，使得傳統接觸印刷製程之缺點越來越明顯。光學微影技術是將線路或微結構透過光學的方式成像於基板上。傳統的曝光機製作光罩往往花費許多時間以及製程成本，製作完成的光罩有不平坦或缺陷時，會造成PCB曝光不良的問題。為了減少光罩在PCB微影製程中所產生的問題以及成本，因此近年來發展了無光罩微影技術。本研究主要探討在非平面移基材上曝光之微影系統參數最佳化以加強解析度，使用數位微反射鏡裝置(digital micro-mirror device, DMD)形成，以點陣列並定義L/S與CH圖案拖曳。首先使用Virtual Lab分析動態光罩微影系統潛像，檢測影響潛像品質之光學參數，並以紫外光405nm雷射光束在非平面矽晶圓光阻表面上，以光點陣列掃描成像。探討曝光解析度之問題，本文在運用脈衝寬度調頻(Pulse Width Modulation，PWM)操作DMD光罩之開啟時序組合最佳化光源覆蓋模態像素，並採用多目標粒子群最佳化(Multi-Objective Particle Swarm Optimization，MOPSO)演算法，分別對非平面平台移動速度及光源像素覆蓋率做規劃，以覆蓋率調整曝光效果設定最小線寬以及提升成像對數斜率(Image Log-Slope，ILS)為目標函數，演算法將覆蓋率配合平台高度移動和平面移動及DMD鏡子控制做組合，提升微影曝光系統的解析度，有效達到曝光劑量之控制並在微影製程中得到10um以內之曝光線寬。

Exposure lithography is one of the important technologies in the printed circuit board (PCB) process. In recent years, the precision of the process has been increasing, which makes traditional contact printing the shortcomings of the process more and more obvious. Optical lithography is the transmission line or micro-structure through the optical imaging on the substrate. Traditional exposure machine masking often spend a lot of time and process cost, the production of the mask is not flat or defect, will cause PCB exposure problems. In this paper, we focus on the optimization of dynamic mask photomicrograph system parameters for non-planar mobile platform to enhance the resolution. The mask is designed with digital micro-mirror device (DMD). The mask is exposed in dot pattern the latent image of dynamic photomask system was analyzed by Virtual Lab. In this paper, we use the Pulse Width Modulation (PWM) to operate the DMD mask's turn-on timing combination, which can be used in the combination of the scanning platform and the exposure to explore the exposure resolution. (MOPSO) algorithm, the moving speed of the nonplanar platform and the pixel coverage of the light source are respectively designed. When the coverage adjustment is carried out, the coverage of the light source is changed. Exposure search for minimum linewidth, and improved image log-slope (ILS). The algorithm combines coverage with platform height and plane movement and DMD mirror control to enhance the resolution of the lithography exposure system, Effective exposure dose control and in the lithography process to get 10um or less exposure line width.

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