本論主旨在設計邊界模式之單開關升壓型功率因數校正控制晶片，為了藉由減少低頻諧波量之電源電流而獲得較高的功率因數，須使一個切換週期內之責任週期正比於電源瞬時電壓值對輸出電壓之比例。在此文中，將先進行變責任週期單開關升壓功率因數轉換器的分析，接著，根據輸出增益方程式，推演出電路穩壓機制，進而實現功率因數校正控制晶片。相較於使用定頻、定責任週期之不連續導通模式控制，所提出之變責任週期控制結構其優點，如較低的諧波量可具有較高的功率因數、具有較高之穩定輸出電壓可提高效率、控制架構簡單易實現之優點。本控制晶片使用台積電0.35μm 2P4M 3.3/5V CMOS製程，系統模擬結果驗證此控制方法之正確性。

This thesis aims to realize a boundary-mode control IC for single-switch boost power factor correction (PFC) converters. To reduce the low-frequency harmonics of the source current and achieve high power factor, the duty cycle must be regulated according to the ratio of the instantaneous source voltage and the output voltage for each switching period. In this thesis, we analyze the single-switch boost PFC converter with variable duty cycle control method, then, according to the voltage-gain equation, and the PFC control chip could be implemented. Compared with the conventional DCM PFC control method with fixed switching frequency and constant duty cycle, the proposed variable duty cycle control method has many merits such as low harmonics, high power factor, good voltage regulation, high efficiency, and simple circuit. The TSMC 0.35μm 2P4M 3.3/5V CMOS process is adopted for the implementation of this chip. The simulation results under different environment and process variations are shown to verify the feasibility of the proposed scheme.

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