本論文分為兩個部分，第一部分目的在探討使用共濺鍍氣相沉積法製備碳化矽薄膜。不同於高溫(1600℃)化學氣相沉積法製備碳化矽薄膜，本研究之重點在於利用矽合金靶材和碳靶在相對低溫的下以不同射頻電漿製程參數嘗試製備出碳化矽薄膜。輔以光學儀器測量，驗證成長出的薄膜中是否含有碳化矽鍵結、以及薄膜晶體結構和薄膜元素分析。
第二部分針對熱壁式化學氣相沉積法磊晶碳化矽機台磊晶速率過低的問題做一新的改善提案，設計一可迴旋之氣體蓮蓬頭於磊晶載盤上，藉由提高與載盤之間相對的反應氣流流速，用以降低熱傳邊界層之厚度並使矽甲烷在熱傳邊界層滯留時間縮短，以達到提升碳化矽磊晶成長速率之目的。模擬計算結果顯示在一般碳化矽磊晶機台的操作條件下，當迴旋式氣體蓮蓬頭轉速達500 rpm時，能讓碳化矽磊晶成長速率由16 um/hr有效提升到150 um/hr。

This paper is divided into two parts. The first part is to prepare silicon carbide films by using silicide/carbon co-sputtering; the second part is to explore the strategy for high rate silicon carbide epitaxy through introducing a rotating shower head.
First of all, silicon carbide films were prepared by co-sputtering silicide alloy and carbon targets at temperatures lower than 380 ℃. FT-IR measurements indicated that the obtained films content with the characteristic Si-C bonding at 800 cm-1.
In the second part, a new concept to introduce rotating shower head in a conventional hot-wall epitaxial SiC chemical vapor deposition equipment was proposed to increase the thermal boundary layer thickness so as to enhance the growth rate of SiC epitaxy. One dimensional simulation was made to calculate the variation of thermal boundary layer thickness with respect to the rotational speed of the shower head. The results showed that with increasing the rotating speed of shower head from 0 to 500 rpm, the growth rate of silicon carbide can effectively be raised from 16 um/hr to 150 um/hr under a typical deposition condition.

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