本實驗以Zn+ZnO當作反應源，利用鋅蒸氣氧化法成長氧化鋅一維材料，並討論不同觸媒、不同觸媒製備方式、不同基板、複合觸媒以及基板粗糙度對氧化鋅一維材料成長之影響。
　　在觸媒的選擇上，我們使用了Sn、In、Ni三種元素。實驗結果發現，在單一觸媒的部份，以化學溶液旋鍍法經氧化及還原反應後的Ni觸媒所成長出的一維結構形態最為優異，為六角柱狀結構，不過直徑仍太粗，約有2μm ~ 3μm，因此我們利用調整化學溶液中PVA量、複合觸媒的使用與基板蝕刻來改善此情形，發現當PVA的濃度調整到10%時，會有細直徑奈米柱的生成，但是直徑差異相當大，為200nm ~ 2μm；於複合觸媒的實驗中，我們發現了在Ni中添加Sn可以使氧化鋅奈米柱的直徑更加均勻，混合觸媒所成長出之氧化鋅奈米柱其直徑約為200nm，但有少許氧化鋅之披覆物，而雙層觸媒所成長出之氧化鋅奈米柱其直徑約為400nm，最後結合基板蝕刻，限制複合觸媒的移動，發現Sn(濺鍍)/Ni(旋鍍)複合觸媒搭配經氫氧化鈉蝕刻後的單晶藍寶石基板所成長出的陣列氧化鋅奈米柱形態最為優異，其直徑在100nm以下，且長度約為20μm ~ 40μm。
　　由TEM觀察以及EDS元素分析中，顯示了在氧化鋅一維結構的頂端並無發現金屬觸媒顆粒，由此推斷成長機制為VS機制。在成長過程的部份，我們利用Sn(濺鍍)/In(旋鍍)複合觸媒與Sn(濺鍍)/Ni(旋鍍)複合觸媒來探討陣列及非陣列氧化鋅奈米柱的成長過程，發現有觸媒顆粒的Sn(濺鍍)/Ni(旋鍍)觸媒，在氧化鋅奈米柱的成長初期會形成一多角柱狀成核點，接著從頂端成長垂直的一維材料；而沒有觸媒顆粒的Sn(濺鍍)/In(旋鍍)觸媒在成長初期僅能形成非晶型波浪狀之ZnO層，接著從高低起伏弧面成長出一維材料，故於成長初期即非垂直成長。因此金屬觸媒的有無與特性影響了成核點的好壞，進而影響了氧化鋅奈米柱的陣列性。另外從XRD及TEM結構分析得知，本實驗所合成出的氧化鋅奈米柱為Wurtzite結構。
　　在PL光譜的分析中，可以看出本實驗所合成出的細直徑奈米線幾乎沒有缺陷峰的存在，顯示其品質相當優異，隨著直徑地增加，缺陷峰則越來越明顯，原因是因為粗直徑的奈米柱之氧所需要佔據的位置較多，而本實驗氧分壓為固定所導致。在各種溫度的退火比較發現，在成長溫度以下的退火溫度可以有效降低缺陷峰，而退火溫度若高於成長溫度，則缺陷峰會因為空氣中的氧氣填補速率不及晶體中的氧脫離而重新顯現。

In this experiment, we prepared one-dimensional ZnO nanorods by the oxidation of evaporating Zn vapor with mixed powders of Zn and ZnO. The effects of catalysts, catalyst preparation methods, substrates, composite catalysts, and substrate roughness on the growth of one-dimensional ZnO rods were investigated.
　　Three types of catalysts of Sn, In, and Ni and their related oxides in the forms of single or double layers were involved. The experimental results showed that the Ni catalyst prepared by spin-coating followed by the pyrolysis and reduction reactions can lead to mostly aligned ZnO rods with a hexagonal cross section of 2μm ~ 3μm in diameter. In order to form the ZnO rods in nano size, the amount of PVA binder, a second catalyst, and the etched sapphire substrate were executed to have a smaller diameter. With an amount of 10% PVA in spin coating solution, the ZnO diameter became smaller but non-uniformly distributed in the range of 200 ~ 2μm. A second catalyst of Sn mixed into Ni catalyst improved the uniformity of ZnO rods with a size of ~ 200nm, however some big ZnO crystals were observed. If the second catalyst was stacked on the Ni catalyst to form bilayer catalyst, uniform and well-aligned ZnO rods with a diameter of 400nm were obtained. Combining with an NaOH-etched substrate to limit the migration of composite catalyst, well-aligned ZnO nanorods with a long length of 20~40 μm and a diameter smaller than 100 nm were obtained on the Sn(sputter)/Ni(spin coating) bilayer catalysts.
　　
　　From the characterizations of TEM and EDS, the vapor-solid growth mechanism was proposed, by observing without catalysts on the tips of ZnO rods. To understand the growth procedures, two systems of the Sn(sputter)/In(spin coating) and Sn(sputter)/Ni(spin coating) bilayer catalysts were investigated. It was observed that the Sn(sputter)/Ni(spin coating) catalyst formed discrete hexagonal nanocolumns in the initial nucleation stage to assist forming the vertically aligned ZnO nanorods. On the other hand, Sn/In bilayer catalysts had ZnO covered at initial stage to form a continuous wave-like layer, which led to slightly slant rods.
　　From the results of PL spectra, we found that the small-sized nanorods were free from defect emission, indicating a good quality in crystallinity. The defect emission became apparent for the rods with larger diameter due to the insufficient supply of the oxygen flow during processing. The PL behaviors for the post-annealed ZnO nanorods were studied. It was observed that the defect emission was improved after 700oC annealing in air, but it became severe after rods were annealed at higher temperature of 800oC in air.

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