研究生: |
張書豪 Shu-hau Chang |
---|---|
論文名稱: |
錫-銀-銅合金與金基材界面反應之研究 Study of Interfacial Reactions between Sn-Ag-Cu Alloys and the Au Substrate |
指導教授: |
顏怡文
Yee-wen Yen 李嘉平 Chia-Pyng Lee |
口試委員: |
陳志銘
none 薛人愷 none 高振宏 none |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2005 |
畢業學年度: | 93 |
語文別: | 中文 |
論文頁數: | 76 |
中文關鍵詞: | 反應偶 、金基材 、錫銀銅 、無鉛銲料 |
外文關鍵詞: | reaction couple, Au substrate, lead-free solder, SnAgCu |
相關次數: | 點閱:231 下載:14 |
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摘 要
本研究主要是探討錫-銀-銅合金與金基材界面反應。區分為三個不同錫濃度系統:96.5wt%Sn、95.5wt%Sn、95.0wt%Sn,分別與金基材進行固相/固相界面反應,反應溫度為150℃,180℃,200℃,反應時間12~1200小時不等,觀察界面反應生成的介金屬相種類與界面型態。
實驗觀察發現於反應溫度200℃金基材與合金間依序生成AuSn/AuSn2/AuSn4/(AuCu)Sn/(CuxAu1-x)6Sn5等相。當反應溫度為180℃,150℃合金中銅濃度增加會抑制AuSn4、AuSn2等介金屬相的生成,金基材與合金間依序生成AuSn/AuSn2/(AuCu)Sn/(CuxAu1-x)6Sn5等相或AuSn/(AuCu)Sn/(CuxAu1-x)6Sn5等相。
介金屬生成厚度正比於反應時間的平方根,因此反應為擴散控制。而介金屬成長速率隨反應溫度下降與合金中銅濃度增加而減緩。而合金中銅濃度增加(AuCu)Sn/(CuxAu1-x)6Sn5介金屬層厚度較厚,但整體介金屬成長速度趨緩(金基材消耗速度亦減緩),可能原因為生成(AuCu)Sn/(CuxAu1-x)6Sn5介金屬層產生之障蔽效應導致錫原子擴散速度減緩,並發現合金中銅濃度增加亦減緩反應偶中金原子往銲料端擴散的情形。
ABSTRACT
This study investigated interfacial reactions between Sn-Ag-Cu alloys and Au substrate. It's distinguished three systems that different concentration of Sn. The reaction time is 12 hour to 1200 hour, reacted at 150,180 and 200°C.After reaction,we analyze the species of IMCs and observe morphology of IMCs.
Reacted at 200°C, five phases, AuSn /AuSn2 / AuSn4 / (AuCu)Sn /(CuxAu1-x)6Sn5,are found between Au substrate and Sn-Ag-Cu Alloys. Reacted at 180°C,increase the Cu concentration in alloy will restrain the formation of AuSn4. Four phases, AuSn /AuSn2/(AuCu)Sn/(CuxAu1-x)6Sn5
are found between Au substrate and Sn-Ag-Cu Alloys.Reacted at 150°C, increase the Cu concentration in alloy will restrain the formation of AuSn2. Three phases, AuSn /(AuCu)Sn/(CuxAu1-x)6Sn5 are found between Au substrate and Sn-Ag-Cu Alloys.
The thickness of the reaction layers increases with higher temperatures and longer reaction time, and their growth rates are described by using the parabolic law. Based on the reaction path knowledge and interfacial morphology, it is concluded that Sn is the fastest diffusion species in the couples.The thickness of the reaction layers decrease when the concentration of copper in alloy increase. But the thickness of (AuCu)Sn/(CuxAu1-x)6Sn5 phase increase.. Maybe, it result from barrier effect of (AuCu)Sn/(CuxAu1-x)6Sn5 phase. (AuCu)Sn/(CuxAu1-x)6Sn5 phase also restrain Au diffuse to alloy.
參考文獻
1.P. T. Vianco , Welding Journal , pp.45-49 (1997).
2.B. Trumble , IEEE Spectrum , pp.55-60 (1998).
3.P. T. Vianco and D. R. Frear , Journal of Materials , pp.14-19 (1993).
4.C. F. Routron , U. Gorlach , J. P. Candelon , M. Bolshov and R. Delmas , Nature , pp.153-156 (1991) .
5.M. D. Settle and C. C. Patterson , Science , 207 , pp.1167-1176 (1980).
6.D. R. smith and A. R. Flegal , AMBIO , (1995).
7.C. Patterson , J. Ericson , M. Manca-Krichten and H. shirahata , Sci. Total Environ. , 107 , pp.205-236 (1991).
8.D. R. smith and A. R. Flegal , N. Engl. , J. Med , 326 , pp.1293-1294 (1992).
9.昝世蓉、胡鴻章、胡國昌,無鉛製程發展趨勢及可靠度需求,電子月刊,第九卷,第十一期.
10.昝世蓉,環保型電子產品的材料趨勢, 工安環保報導(經濟部工業局)(2004).
11.J. E. Morris , Workshop , The Design and Processing Technology of
Electronic Packaging (1997).
12.P.A.Totta, Advances in Electronic Packaging, ASME, New York,USA, Volume 1, p.323(1997).
13. L. F. Miller, “Controlled collapse reflow chip joining”, IBM J. Res.
Develop., 5 ,pp.239 (1969).
14. P.A.Totta, Advances in Electronic Packaging, ASME, New York, USA,, Volume 1, pp.337(1997).
15.H. Reichl, A. Schubert, and M. Topper, “Relibility of chip and size
packages”, Microelectronics Reliability, 40,pp.1243 (2000).
16. J. Baliga, “Flip-chip packaging: prepare for the ramp-up”, Semic
onductor International, 21,pp.87 (1998).
17. J. H. Lau, Flip Chip Technologies, McGraw-Hill, New York. USA,
, Chapter 3(1996).
18 J. H. Lau, Flip Chip Technologies, McGraw-Hill, New York. USA,
Chapter 15(1996).
19. K.Zeng K.N Tu“Six cases of reliability study of Pb-free solder joints in electronic packaging technology “Materials Science and Engineering: R: Reports, v 38, n 2, Jun 14, pp.51(2002).
20.A. Rahn, The Basics of Soldering, John Wiely & Sons, NewYork (1993).
21.S. K. Kang and A. K. Sarkhel, Journal of Electronic Materials, Vol.23, pp. 701-707 (1994).
22.E. P. Wood and K. L. Nimmo, Journal of Electronic Materials, Vol.23, pp. 709-713 (1994).
23.M. McCormack and S. Jing, Journal of Electronic Materials, Vol. 23,
pp. 715-720 (1994).
24.Y. C. Lee and W. T. Chen, Manufacturing Challenges in Electronic Packaging, Chapman & Hall, New York (1999).
25 F. J. J. Van Loo, Prog. Solid St. Chem., Vol. 20, pp.47-99(1990).
26.C. Wagner, Z. Anorg. Chem., Vol. 236, pp. 320,(1938).
27. J. B. Clark, Transactions of the Metallurgical Society of AIME, Vol.
227. pp.1250-1251,(1963).
28. D. A. Porter, K. E. Easterling, “Phase Transformations in Metals and
Alloys” (2000).
29.R. E. Reed-Hill and R. Abbaschian, “Physical Metallurgy Principles”,
3rd edition, PES, Boston,(1994).
30.C. Wagner, Zeitschrift fur Anorganische und Allgemeine Chemie.,Vol. 236, pp. 320-328 (1938).
31.F. J. J. van Loo, J. A. van Beek, G. F. Bastin, and R. Metselaar, in
“Diffusion in Solids: Recent Developments”, ed. By M. A.ayananda and G. E. Murch, The Metallurgical Society, Inc.,Warrendale, Pennsylvania (1985).
32.J. S. Kirkaldy and L. C. Brown, Canadian Metallurgical Quarterly,
Vol. 2, pp. 89-117 (1963).
33.T.A. Green, M.J. Liew, and S. Roy, “Electrodeposition of Gold from a Thiosulfate-Sulfite Bath for Microelectronic Applications”,Journal of The Electrochemical Society, vol.150, pp.C104-C110(2003).
34.Daniela Staiculescu, Joy Laskar, Membr,IEEE, and Emmanouil(Manos) M.Tentzeris, Member,IEEE," Design Rule Development for Microwave Flip-ChipApplication",Microwave theory and techniques, September,P1476~1481(2000).
35.S. Nakahare, R. J. McCoy, L. Buene, and J. M.Vandenberg, Thin Solid
Films, Vol. 84, pp. 185-196,(1981).
36.M. O. Alam and Y. C. Chan,K. N. Tu , "Effect of 0.5 wt % Cu inSn-3.5%Ag Solder on the Interfacial Reaction with Au/Ni Metallization" , Chem. Mater., Vol.15 , pp.4340-4342 (1996).
37.L.C.Shiau,C.E.Ho,C.R.Kao , Soldering & Surface Mount Technology,
vol. 14, no. 3, pp. 25-29(2002) .
38.王信介"自生反應阻障層 Cu-Ni-Sn 化合物在覆晶式封裝之研究"
國立中央大學化學工程與材料工程研究所, 碩士論文,民國91年.
39.C.M.Liu,C.E.Ho,W.T.Chen,andC.R.Kao,”Reflow Soldering and Isoth
-ermal Solid-State Aging of Sn-Ag Eutectic Solder on Au/Ni Surface Finish”,Journal of Electronic Materials , Vol.28 , pp.1251(2001).
40.J.H.Lee,J.H.Park,D.H.Shin,Y.H.Lee,andY.S.Kim,“Kinetics of Au-c
ontaining Ternary Intermetallic Redeposition at Solder/UBM Interface
”Journal of Elentronic Meterials,Vol.30,No.9(2001).
41.D. Gregersen, L. Buene, T. Finstad, O. Lonsjo, and T. Olsen, Thin
Solid Films, Vol. 84, pp. 185-196 (1981).
42.S.Nakahare, R. J. McCoy, L. Buene, and J. M.Vandenberg, ThinSolid
Films, Vol. 84, pp. 185-196 (1981).
43.E. B. Hannech and C. R. Hall, Materials Science and Technology,Vol.
8, pp. 817-824 (1992).
44.顏怡文,"銀-錫/銅與銀-錫/金系統之相平衡與界面反應的研究"國立
清華大學化學工程學系,博士論文,民國91年.
45.N. D. Wheaton and K. Mills , ASM Handbook , Vol.3 (1990).
46.李芳儀,"銅含量對Sn-Ag-Cu無鉛銲錫振動破壞效應之特性"國立
成功大學材料科學及工程學系,碩士論文,民國92年.
47.高振宏,"探討Au/Sn/Cu 三元擴散偶中Au 與Cu 之交互作用",中國
材料學會論文集, 民國93年.
48.I. Karakaya and W. T. Thompson, Bulletin of Alloy Phase Diagrams,
Vol. 8, pp. 340-347 (1987).
49. H. Okamoto and T. B. Massalski, Bulletin of Alloy Phase Diagrams,
Vol. 5, pp. 492-503 (1984)
50.N. Saunders and A. P. Miodownik, Bulletin of Alloy Phase Diagrams,
Vol. 11, pp. 278-287 (1990).