本論文主要研究功率半導體元件，而做為開關器使用之功率半導體元件，理想上的導通狀態為短路，並且在截止狀態為開路；在市面上像是傳統的功率金屬氧化物半導體場效電晶體(MOSFET)在耐高電壓時有過大的串聯電阻的問題，而另一種元件－絕緣閘極雙極性電晶體(IGBT)雖解決前者的串聯電阻過大之問題，可是因為元件本身有寄生的閘流體結構，易造成元件發生閂鎖效應，造成閘極失去控制能力，嚴重時易使元件燒掉，所以，本論文提出一新型溝渠式垂直結構之絕緣閘極雙極性元件，不只可以改善串聯電阻過大問題，且藉由穿隧型場效電晶體結構取代傳統絕緣閘極雙極性電晶體內的金屬氧化物半導體結構觸發產生電流，此新型結構因本身沒有閘流體結構，故可有效避免發生閂鎖問題。

本論文也同時藉由觀察能帶變化探討溝渠式閘極深度與寬度對此元件的影響，像是，觸發穿隧機制的影響或是帶動漂移電場的影響，而除了元件設計，本論文也利用調變不同製程方式調整控制高濃度分佈之區域，使元件可以提高其穿隧效率，進而使元件達到最佳的導通特性。

在最後探討元件的橫向尺寸微縮化時的影響，微縮化元件不只可以提高其崩潰電壓，更可以在每單位面積獲得更佳的導通特性。

Power devices act as a switch to control the power delivered to the load. In this thesis, a novel trench-type insulated-gate bipolar transistor device has been proposed without p-n-p-n latch-up phenomenon, which shows better characteristics as compared with the conventional trench-gate power MOSFET.

Moreover, by using the design of device structure and/or fabrication process to enhance the band-to-band tunneling or increase the electric field in drift region, the on-current of the trench-gate TFET-IGBT can be effectively improved. Accordingly, proper p+ source implantation profile and trench-gate dimension can be employed to optimize the electrical characteristics.

As a result, the trench-gate TFET-IGBT is capable of causing smaller on-resistance than the conventional trench-gate power MOSFET, with avoiding the latch-up problem in the conventional trench-gate MOSFET-IGBT.

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