本實驗以熱氧化法成長出摻鈷的氧化鋅奈米線結構，以磁控濺鍍法先沉積純鋅膜與摻鈷的鋅薄膜兩種，實驗結果發現純鋅膜經熱氧化後會形成奈米針結構，而有摻雜鈷的鋅膜在熱氧化後會轉變為奈米線結構，其結構上受到摻雜有很大的影響，由EDS量測結果可得知鈷元素順利的摻雜進入氧化鋅當中，其平均鈷濃度為1原子百分比(1 at.%)，由XRD 量測可知其繞射面有(100)、(002)及(101)，且(101)此繞射峰經過摻雜後有微量的往大角度偏移，原因為鈷離子取代鋅離子位置後晶格上會因此微量的萎縮，但其結構上依舊為氧化鋅六方最密堆積纖鋅礦結構，而拉曼頻譜在摻雜過鈷元素後，明顯的多了690 cm-1 的局部紊亂振動模態，此模態與鈷摻雜後其結構相關，PL分析於室溫下其近能隙發光有很良好的UV 範圍發光波峰位於3.287 eV，由變溫PL分析其機制為自由能階-束縛能階躍遷所輻射的光，TEM圖中可以看出受到摻雜的氧化鋅奈米線其晶格排列上變得較紊亂，結晶性受到了摻雜而較差。

Cobalt doped ZnO nanowires have been prepared by thermal oxidation of metallic Zn-Co films at 450C for three hours. Comparing with ZnO nanowires obtained from thermal oxidation of Zn films, the ZnO:Co nanowire exhibit a larger diameter. EDS analysis shows that the concentration of Co is ~ 1 at.%. XRD analysis shows that ZnO:Co has a hcp structure while the diffraction peak of (101) shifts to larger angle. The reduced lattice constant is due to the replacement of Zn by Co which has a smaller ionic radius. Raman spectroscopy analysis shows a Raman peak at 690 cm-1, which is the disorder local vibration mode due to the incorporation of Co into ZnO matrixes. Room temperature photoluminescence shows strong UV emission at 3.287 eV with an activation energy of 134 meV. Variable temperature PL study shows that the UV emission is due to free to bound transition. The origin of the bound state is likely due to the presence of stacking faults that act as acceptors.

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