本論文以簡單與低成本的製程技術製備高效能矽奈米結構光電元件。矽奈米結構提供能有效增加電子與光學性能、良好的生物相容性、巨大的表面積與體積比以及傑出的光學性質，並提供了多功能性，因此相當有潛力應用在不同的科技領域上，例如場發射元件、氣體感測器與太陽能電池。首先利用無電蝕刻技術製作矽奈米柱結構，再將奈米碳管成長於矽奈米柱結構上製作矽奈米柱/奈米碳管之核殼結構應用於場發射元件。相較於矽奈米柱、奈米碳管，矽奈米柱/奈米碳管之核殼結構提供了更多的場發射源與降低功函數進而改善場發射特性，因此矽奈米柱/奈米碳管之核殼結構陰極有較低的起始電場與較高的場增強因子。
接著利用無電蝕刻技術與反覆無電蝕刻技術製作準直矽奈米線結構與稻草狀矽奈米線結構，並將其應用於氫氣感測元件上。相較於準直矽奈米線結構，稻草狀矽奈米線結構提供了更多表面積、矽氧鍵結與懸浮鍵，能有效增加氣體離子之吸附能力，進而大大提升氫氣感測器之響應能力。
除此之外，更提供一種關鍵技術製作高均勻且可控制之金字塔結構。此技術利用氮化矽薄膜作為等向蝕刻遮罩，再利用調整氮化矽薄膜之厚度可以得到不同尺寸之金字塔結構，並得到良好之抗反射特性。更利用一步驟與二步驟金屬輔助無電蝕刻技術，配合利用融膠凝膠法配製之磷擴散源與網印技術製作高效能矽奈米結構太陽能電池，在此階段藉由最佳化矽奈米結構之表面形貌與特性，太陽能電池之效率提升達到11.86%。最後再藉由熱氧化表面鈍化技術將矽奈米結構太陽能電池之效率提升至13.29%。
此論文的實現方面，以簡單製程成功地製備各種矽奈米結構並應用於光電元件上，期望讓矽奈米結構相關應用元件上能有效地提高效率，以提供給產業界新的材料與製程技術和方向，作為將來開發奈米光電感測元件之研究基礎。

This study presents a simple approach and cost-effective techniques to develop the silicon nanostructure (SNS) based high performance optoelectronic devices. The SNS provide a number of combined properties including excellent electronic/optical properties, favorable biocompatibility, huge surface-to-volume ratios, and excellent anti-reflection property. The SNS offer good performance in applications for field emission (FE) devices, gas sensors, and solar cells.
The CNTs grown directly onto the SiNRs forming a core-shell structure of SiNRs/CNTs field emission cathode by thermal chemical vapor deposition. The field emission properties of SiNRs, CNTs and SiNRs/CNTs field emission cathodes were investigated. It is exhibited that this core-shell structure of SiNRs/CNTs for field emission cathode improves the field emission properties.
The metal-assisted electroless etching (MAEE) and repeated MAEE techniques of fabricating straight-aligned and rice-straw-like SiNW arrays for hydrogen gas sensing. The rice-straw-like SiNW arrays structure effectively increased the surface area and the concentration of silicon oxide, which provided additional binding sites for gas molecules.
A cost-efficient method to texture monocrystalline silicon by depositing a layer of Si3N4 by sputtering to act as an anisotropic etching mask. Anisotropic etching through this mask forms various pyramid structures depending on the thickness of the Si3N4 layer. The texturing process is evaluated in terms of the resulting surface morphology and the reflectivity.
The low cost MAEE, PSG dopant solution and a screen-printing technique are adopted to fabricate the n+ emitter and the electrodes for silicon nanowire (SiNW) array based solar cells. Results indicate that there is a competition phenomenon between the aspect ratio and the density, that straight-aligned SiNW array structures with a certain aspect ratio and an appropriate density possesses better solar cell performance (~10.15%).
Solar cells based on a high efficiency silicon nanostructure (SNS) are developed using the two step MAEE technique. Compared to cells produced using the single MAEE technique, SNS-based solar cells produced with the two step MAEE technique showed an increased silicon surface coverage of and a decrease in reflectivity. Performance of the SNS-based solar cell is found to be optimized (~11.86%) in SNS with a length of ~300nm, an aspect ratio of ~5, and surface coverage of ~84.9%. Moreover, the performance of the SNS-based solar cells is further to 13.29% by using the thermal oxidation passivation method.
The SNS are successful synthesized by the facile methods and low manufacturing temperatures. This work proposes an effective way to enhance the performance of SNS based optoelectronic devices. The development of SNS in this thesis will be useful for the base of next-generation devices.

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