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研究生: 鄧凱元
Kai-Yuan Teng
論文名稱: 以寬能隙元件實現高頻化整合式電感之半無橋功率因數修正器
Implementation of a High-Frequency Integrated-Inductor Semi-Bridgeless Power Factor Corrector with Wide Band-Gap Devices
指導教授: 羅有綱
Yu-Kang Lo
邱煌仁
Huang-Jen Chiu
口試委員: 劉益華
Yi-Hua Liu
榮世良
Shih-Linga Jung
學位類別: 碩士
Master
系所名稱: 電資學院 - 電子工程系
Department of Electronic and Computer Engineering
論文出版年: 2013
畢業學年度: 101
語文別: 中文
論文頁數: 98
中文關鍵詞: 半無橋功率因數修正器高頻化整合式平面電感寬能隙元件氮化鎵
外文關鍵詞: Semi-bridgeless power factor corrector, high switching frequency, integrated planar inductor, wide band-gap devices, Gallium Nitride
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  • 本論文主要目標在於研製500 W半無橋功率因數修正器,其操作頻率設置在300 kHz,並採用寬能矽元件降低其切換損失及採用整合式平面電感降低電路體積,且具有高功率因數、高效率及低電流諧波。文中比較CoolMOS與GaN-FET兩種開關功率元件,以升壓型轉換器作為主架構,採用固定切換頻率及平均電流模式控制,降低輸入電流諧波,並使輸入電流與電壓同相位,達到功率因數修正之目的。論文中分析並驗證整合電感設計,最後實作在線電壓230 Vac時,可達到最高效率η為98%、THD符合IEC61000-3-2之規範以及PF值大於0.96以上。同時也在未來展望提及後續可能的研究方向以提高效率與電路完整性,期待本論文所研製之電路可以更具實用性。


    This thesis aims to study and develop a 500-W semi-bridgeless power factor corrector (PFC) with a switching frequency of 300 kHz. Wide band-gap devices and integrated planar inductor are used to reduce switching losses and the converter size. The presented topology features a high power factor, high efficiency and low current harmonics. Two power switches, CoolMOS and GaN-FET, are applied and their performances are compared. The main circuit is a semi-bridgeless boost converter operated with a fixed switching frequency and average current mode control. Therefore, the input current harmonics are reduced and the input current is forced to be in phase with the input voltage to fulfill the power factor correction function. In this thesis, the integrated inductor design is analyzed and validated. The prototype PFC was implemented with a maximum efficiency up to 98% at 230-Vac line voltage. The THD conforms with IEC61000-3-2, and the PF value is higher than 0.96. Future researches are also mentioned to improve the efficiency and integrity of the circuit, hoping that the developed converter in this thesis can be more practical.

    摘 要 i Abstract ii 誌 謝 iii 目 錄 iv 圖目錄 vi 表目錄 ix 第一章 緒論 1 1.1研究動機及目的 1 1.2論文內容大綱 3 第二章 升壓型功率因數修正器簡介 4 2.1功率因數與總諧波失真之定義 4 2.2升壓型功率因數修正器原理 7 2.3主動式功率因數修正控制法 10 2.3.1乘法器控制法 10 2.3.2平均電流模式控制法 11 第三章 半無橋式功率因數修正器之架構與原理 13 3.1半無橋式功率因數修正器原理架構 13 3.2消除共模雜訊與突波電流的方法 21 3.3對半無橋功率因數修正器之電流分析與定義 22 第四章 整合式平面電感分析與寬能隙元件應用 27 4.1整合式平面電感介紹 27 4.2整合式平面電感動作原理 32 4.3整合式平面電感與一般電感比較 34 4.4氮化鎵之寬能隙元件介紹 38 4.5寬能隙元件特性 39 4.6功率開關比較 41 第五章 高頻半無橋式功率因數修正器設計實例 43 5.1控制IC UCC28070特性介紹 43 5.2高頻半無橋功率因數修正器之設計 52 5.3控制電路設計 58 第六章 電路實測波形與數據 61 6.1應用GaN-FET和CoolMOS之波形比較 61 6.2應用GaN-FET的半無橋功率因數修正器實驗波形 64 6.3損耗分析 73 第七章 結論與未來展望 79 7.1結論 79 7.2未來展望 80 參考文獻 81

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