本論文研究積體化氮化鎵發光二極體與光偵測器模組的電路設計與特性量測。量測本實驗室積體化製程製作的兩種光偵測器(p-i-n結構以及n-p-i-n結構光電晶體)的特性包括暗電流、外部量子效率、在不同偏壓下的響應率，並量測p-i-n光偵測器在發光二極體不同距離下的耦光率與監控響應率(Monitoring responsivity)，以及設計電路將n-p-i-n光電晶體的電流訊號轉換電壓訊號(Transimpedance amplifier)，再將其訊號進行二級放大並達到LED之驅動電壓，成功將光電晶體偵測紫外光的電流訊號驅動同一晶片上的LED發出可見光來警示。
在p-i-n光偵測器監控發光二極體光功率的實驗，，提供發光二極體電流由0 mA增加至2 mA並記錄光偵測器光電流值，當與發光二極體距離為1000 μm時，p-i-n光偵測器光電流從約0.03 nA增加至74.2 nA；當兩者距離為5600 μm時，光電流約從0.34 nA增加至1.53 nA。我們可以得到p-i-n光偵測器的光電流會隨者發光二極體電流的上升呈線性增加。接著取在2mA的發光二極體光功率及光偵測器之光電流值，即可計算出監控響應率，此監控響應率隨著與發光二極體距離增加而下降。其肇因於耦光率隨著距離增加而下降，在兩者距離326 μm下有1.06 %的耦光率，在距離5600 μm下有0.02 %的耦光率。同時我們探討在同樣距離326 μm下的發光二極體光功率與監控響應率關係，給予發光二極體電流從0 mA增加至2 mA，響應率大約落在0.12 mA/W至0.14 mA/W之間。
在積體化紫外光感測器與LED警示燈的實驗，我們使用n-p-i-n光電晶體操作在逆向偏壓9V時，照射波長為350 nm，得出的光電流連接至運算放大器，並提供0.7 V大小的負偏壓在非反相端，使電流轉成電壓訊號控制在0V到0.11V區間，接著透過二級放大器使電壓訊號放大，使電壓訊號在0 V到3 V區間，當入射光強度大於0.7 mW/cm2可提供3 V以上之電壓，即可驅動同一晶片上的發光二極體，達到積體化光偵測器與LED警示燈模組。

In this paper, we study the circuit design and characteristic measurement of the integrated GaN LED and photodetector module. The characteristics of the two photodetectors (p-i-n structure and n-p-i-n structure phototransistor) fabricated by the integrated process of this laboratory include dark current, external quantum efficiency, response rate under different bias voltages, and measurement of opitical coupler rate at different distances from the LED and the p-i-n photodetector. The design circuit will convert the current signal of the n-p-i-n phototransistor to the voltage signal (Transimpedance amplifier), and then the signal is amplified in secondary amplifier to reach the turn on voltage of LED. Finally, the current signal of the phototransistor detecting ultraviolet light is successfully driving the LED on the same wafer and emiting visible light to warn the people.
In the experiment of monitoring the light power of the LED in the p-i-n photodetector, the current of the LED is increased from 0 mA to 2 mA and the photocurrent value of the photodetector is recorded. When the distance from the LED is 1000 μm, the photocurrent of the p-i-n photodetector increased from 0.03 nA to 74.2 nA; when the distance from the LED is 5600 μm, the photocurrent increased from 0.34 nA to 1.53 nA. We can get that the photocurrent of the p-i-n photodetector increases linearly with the rise of the LED current. Then, recording the light power of the light-emitting diode when the forward current is 2 mA and the photocurrent value of the photodetector, the monitoring response rate can be calculated, and the monitoring response rate decreases as the distance from the light-emitting diode increases. The reason is that the optical coupler rate decreases as the distance increases, with the optical coupler rate of 1.06 % at the distance of 326 μm and the optical coupler rate of 0.02 % at the distance of 5600 μm. At the same time, we discuss the relationship between the optical power of the LED and the monitoring response rate at the same distance of 326 μm, and increase the current of the LED from 0 mA to 2 mA, and the response rate is about 0.12 mA/W to 0.14 mA/W.
In the experiment of integrated UV detector and LED warning light, we use n-p-i-n phototransistor and the operate voltage is 9V in reverse bias, the illumination wavelength is 350 nm, the resulting photocurrent is connected to the operational amplifier, and provides 0.7 V at the non-inverting terminal, so that the current is converted into a voltage signal in the range of 0 V to 0.11 V, and then the voltage signal is amplified by the secondary amplifier so that the voltage signal is in the range of 0 V to 3 V, when the incident light intensity is greater than 0.7 mW/ cm2 can provide more than 3 V, which can drive the LED on the same chip to reach the integrated photodetector and LED warning light module.

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