在過去的幾年，人們對於可撓式顯示器的要求增加，促使顯示器在不同的形態
上有了相當多的研究，例如彎曲型、可彎型、捲曲型和可折型，而大部分的研究都
顯示AMOLED 對於實現可撓式結構是最具有潛力與前瞻性的，AMOLED 憑著其
自發光的特性、輕薄結構、低功耗、反應時間快、高對比及廣色域已經可以與發展
成熟的TFT-LCD 相比擬了。而對於3D 的應用上，AMOLED 不會因為液晶旋轉延
遲而導致漏光進而影響畫面品質。然而，由於OLED 是一電流驅動元件而其電流
是由電源線以及背板所產生的，因此在經過長時間的操作下，畫面是否能維持正常
全都取決於驅動電流的精準度。相反的，要是能夠使用具有高度電流驅動能力的技
術，便能挖掘出更多AMOLED 的應用範圍，在許多的背板技術中，低溫多晶矽
（LTPS）所製成的薄膜電晶體便具有高載子飄移率，使得顯示器的解析度以及開
口率都能一併提升。在第一個畫素電路中，我們提出一個以低溫多晶矽（LTPS）
組成的5T2C 畫素電路，其特點是能透過畫素內部電壓負回饋的機制而獲得額外電
流平衡有機發光二極體衰退帶來的發光電流減少以及導線內部寄生電阻產生的壓
降，另外，模擬結果顯示，在薄膜電晶體的臨界電壓飄移正負0.5Ｖ時，此電路的
電流錯誤率僅有0.615%。
雖然低溫多晶矽（LTPS）有諸多上述的優點，但其實際製程上，由於需要準
分子雷射技術的設備以及雷射處理不均勻的特性導致電晶體的電特性不一致。最
近，許多研究指出氧化銦鎵鋅（IGZO）有不錯的電特性、大面積製程上較為均勻
以及製程成本較低的優點，使其在顯示器技術上有相當的優勢。但對於實際的
AMOLED 顯示器上，除了電晶體的電特性飄移之外，有機發光二極體的衰退以及
iii
寄生電阻和寄生電容帶來的影響也需要在我們設計畫素電路時一併考慮。因此，考
慮上述問題後，我們從實驗室所得的氧化銦鎵鋅（IGZO）數據中先建立了一個
model 並提出第二個畫素電路是以氧化銦鎵鋅（IGZO）為電晶體的補償電路，其
特點為第一個不藉由外部電路就能進行全面性補償的電路並提供逆偏壓延長有機
發光二極體的壽命。此外，此電路也適用於氧化銦鎵鋅normally-on 的電晶體特性，
根據模擬結果，在電晶體的臨界偏壓飄移正負１Ｖ時，電流的錯誤率僅0.5%。
第三個電路我們特別針對大尺寸顯示器的需求進行設計，除了使用適合大尺
寸的氧化銦鎵鋅（IGZO）技術外，我們讓上下兩個有機發光二極體共用一個驅動
電路，達到2.5T1C 的極簡結構，並且利用各自的發光時間對另一個有機發光二極
體進行逆偏壓的操作而不發光時間也有部分階段同樣也操作在逆偏壓的情況，使
得延長有機發光二極體的效果在理論上有相當的效果，此外，在實際應對ＲＧＢ
三種不同的有機發光二極體時，可直接藉由設計其電容值而限定流經的發光電流。
模擬結果顯示，在電晶體的臨界電壓飄移正負1V 時，其電流錯誤率僅0.71%。在
考慮資料線與掃描線之電阻與電容造成的延遲效應，我們以一個３０吋的面板為
例，分析面板四個角落的電流誤差均小於1.5%。
為了能實現高解析度並且具有3D 功能的顯示器，以上３個新型電路都藉由同
步發光（SE）的方式進行發光，並且在灰階寫入階段時，每一條掃描線的寫入時間
都只需要3.5 微秒。最後，藉由電路模擬結果的印證並將其與過去期刊上的畫素電
路作比較，顯示出設計的電路有著顯著的特性。

In the last few years, the increasing demand of flexible display has boosted large
amount of research and development in various types of flexible displays, including
curved, bendable, rollable and foldable. Most previous studies have indicated that active
matrix organic light-emitting Diode (AMOLED) is the most potential and promising
technology to realize flexible display. In addition, the advantages of AMOLED displays
such as the nature of self-emission, thin structure, low power consumption, short response
time, high contrast and wide color gamut all make it comparable with the mature TFTLCD.
Compared with TFT-LCD, there is no light leakage occurred in AMOLED which
caused by the slow rotation rate of liquid crystal and hence AMOLED is more suitable
for 3D application. However, since OLED is a current driving device and the current is
generated from the driving TFT and power line, the sensitivity of current determines the
image quality under the long-term operation. Otherwise, if a high current driving ability
technology is applied on AMOLED, which would release the overall potential of
AMOLED to make a significant applications. Among the technologies of backplane,
Low-temperature polycrystalline-silicon (LTPS) thin-film transistors (TFTs) shows
which has high mobility to increase the aperture rate and enable a higher resolution
display. Therefore, in the first circuit, we proposed a high speed 5T2C pixel circuit based
on LTPS-TFT, which has the strong immunity to the variation of driving TFT VTH and
provides extra current, generated from circuit design, to cancel the current variation
caused by raised VTH_OLED and power dissipation of wires.
Unfortunately, applying in actual pixel design, the distinct fabrication of LTPS-TFTs
lead to the electrical mismatch and the fabrication investment on excimer laser annealing
v
(ELA) raise the cost of a display. Recently, many researches revealed that a-IGZO TFT
seems to a good candidate for AMOLED in large-sized displays owning to its satisfy
electrical characteristics, uniformity in large area and low fabrication cost. For a real
display, there exist some other issues such as OLED degradation and IR drop. None of
paper reported can comprehensively compensate for the issues of displays by voltage
programming pixel circuit. Therefore, in the thesis, we build a model of a-IGZO TFT for
SPICE which was fabricated from our lab at first. In the second pixel circuit, it is
composed of 4T2C based on a- IGZO TFT. It can not only successfully detect the VTH of
normally-on and normally-off TFT, but apply reverse bias on OLED. Furthermore, the
variation of mobility is also compensated. According to the simulation results, the average
current error rates are only 0.5% (ΔVTH =±1V) and below 1% (ΔVTH_OLED = +0.5V,
ΔVDD= -0.5V). For the pursuit of low power consumption and large aperture rate for
bottom emission, the last pixel circuit is equivalent to 2.5T1C based on a-IGZO TFT.
According to the simulation for 30 inch display, the results show the high instability at
the four corners error rate which demonstrate the pixel circuit suitable for large-sized
display. And the AC power line provide reverse bias on OLED for a half of duty cycle
which effectively alleviate the current stress on OLED and prolong the lifetime of OLED.
The last pixel circuit has high instability of current which is demonstrated by average
current error rates of 0.71% (ΔVTH =±1V), 0.82% (ΔVTH_OLED = +0.5V) and 0.92%
(ΔVDD= -0.5V).
In our research, we successfully proposed three pixel circuits which are quite suitable
for the large-sized displays. Among them, each pixel circuits possess individual specialty
for distinct displays. Overall, all of them were verified by SPICE and compared with other
pixel circuits from presented paper.

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