本研究是採用射頻磁控濺鍍法於康寧玻璃型號1737 基板沉積微晶矽鍺薄膜，使用的靶材為鍺錠貼附於矽靶上並控制鍺元素原子比20 % 來共鍍沉積，在沉積過程中加熱基板至150oC，並控制不同的氫氣與氬氣的流量比來製備，其後經退火處理後再利用 X光繞射、 霍爾效應量測/導電性量測、 紫外/可見光光譜儀等儀器分析薄膜的結晶性、電性和光學等性質分析。
由實驗結果得知，隨著氫氣與氬氣的流量比增加其晶粒尺寸由10 nm增加到17.5 nm。不僅如此，隨著退火溫度的增加其晶粒尺寸也有顯著的變化。於電性分析中，透過霍爾效應儀器量測出薄膜於700oC退火下，其載子移動率隨著氫氣與氬氣的流量比增加而有明顯的變化，從5.04 cm2/Vs 增加至 12.21 cm2/V。
於光學分析中其結果顯示出，退火於600oC和700oC下微晶矽鍺薄膜其導電性隨著氫氣與氬氣的流量比增加而提高，分別由3.18x10-9 S/cm 增加至3.2x10-7 S/cm 和從1.34x10-7 S/cm增加至 5.14x10-7 S/cm。
微晶矽鍺薄膜結晶其結晶性質與著氫氣與氬氣的流量比和溫度有很大的關係，一個好的結晶性的微晶矽鍺太陽能電池其特性不但能改善非晶矽的缺點也能同時擁有結晶矽於光譜中吸收寬廣波長的優點。

Hydrogenated microcrystalline silicon germanium (μc-Si1-xGex:H) thin films were deposited on CORNING #1737 glass substrates with in-situ substrate heating at 150oC by radio frequency magnetron co-sputtering of Si and Ge, x≦0.2. H2/Ar ratios and annealing temperature were varied to obtain their influences on the crystal structure, electrical properties and optical properties of μc-Si1-xGex:H thin films which were analyzed with XRD, Hall effect measurement / conductivity measurement and UV-VIS spectrum, respectively.
The characterization results indicate that the crystallite size increases from 10 nm to 17.5 nm with increasing H2/Ar ratio from 0 to 1. After annealing, the crystallite size also increases with the temperature. For electrical property analyses, the Hall effect measurement results show carrier mobility increases from 5.04 cm2/Vs to 12.21 cm2/Vs when the H2/Ar ratio increases from 0 to 1. For the optical property, the μc-Si0.8Ge0.2:H thin film conductivity increases from 3.18x10-9 S/cm to 3.2x10-7 S/cm and from 1.34x10-7 S/cm to 5.14x10-7 S/cm when the H2/Ar ratio increases and annealing temperature is at 600oC and 700oC, respectively.
The μc-Si0.8Ge0.2:H crystal properties are found to vary with H2/Ar flow ratio and temperature. μc-Si0.8Ge0.2:H solar cell with good crystal properties or well as wide spectrum absorbability is potentially useful to replace amorphous Si.

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