因應單晶藍寶石基板於固態照明(solid-state illumination)產業之大量需求，為提高藍寶石晶圓生產效率與加工品質，完善的晶圓平坦化製程建立有其必要性，而晶圓研光製程(Lapping)之研光品質的優劣影響了後段拋光所需製程時間與成本，本研究主要在研發新型研光盤並分析加工壓力、研光盤轉速製程參數和不同研光盤材質對研光的影響，由本研究建立之摩擦力與溫度複合式線上檢測系統(Friction and temperature complex detection system, FTCS)，藉由材料移除率、摩擦力與溫度等性能及製程資料來調整製程參數，並用於研光終點檢測。由拋光實驗結果可得，改變加工壓力與研光盤轉速對於材料移除率的增益約可提升10.6%及38.6%，且使用金屬銅盤製程對於材料移除率的影響性較樹酯銅盤顯著。本研究另製作出樹酯銅盤及樹酯銅鐵盤以發展創新之固相反應輔助研光製程，所發展樹酯銅盤及樹酯銅鐵盤之研光盤用於藍寶石晶圓研光可達到1微米/分鐘之材料移除率，平均表面粗糙度Sa為7奈米-9奈米。本研究建立之FTCS系統與創新研光盤與製程研究成果可作為未來先進基板研拋光產業新製程開發。

Due to demand of mono-crystal sapphire wafers in solid-state illumination industry, sapphire wafer planarization process needs to be investigated to improve wafer production efficiency and quality. Diamond lapping is one critical process to reduce long polishing time of sapphire wafers. This study develops a friction and temperature complex detected system (FTCS) for prediction of effects induced by lapping process parameter and different kinds of lapping plates. Based on performance of material removal rate (MRR), coefficient of friction (COF), variation of temperature obtained by the FTCS, the lapping process parameter can be used to find the endpoint detection of lapping process. Experimental results of MRR have been improved as 10.6% and 38.6% by increasing lapping pressure and lapping plate speed. Moreover, a self-developed resin copper lap (RCL) has been fabricated for comparison of MRR and a resin copper-iron lap (RCFL) has been designed and fabricated for developing a solid-state reaction assisted lapping (SS-Lapping) process of the sapphire wafers in this study, MRR could achieve up to 1 µm/min and surface roughness Sa maintains 7nm to 9nm by such self-made RCL and RCFL. Furthermore, the FTCS and RCFL could be applied on future study to develop different lapping process of advanced wafer fabrication.

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