本論文主要是研究先以Cu(hfac)2．H2O為先驅物並外加水來沈積氧化亞銅(Cu2O)薄膜之後，再利用乙醇將Cu2O薄膜還原成Cu薄膜的二階段化學氣相沈積成長方式之第二階段乙醇還原的過程。
首先我們固定Cu2O薄膜的成長溫度為260℃，沈積時間30分鐘，來成長45nm的Cu2O薄膜，再固定還原時間3分鐘，以乙醇在不同還原溫度將Cu2O薄膜還原成Cu薄膜。從在不同溫度還原所得之薄膜的電子能譜化學分析儀(ESCA)圖譜、電阻率、膜厚及銅原子在膜中的濃度變化可知，隨著還原溫度的提高，Cu2O薄膜越快速的還原成Cu薄膜。其中以280℃的還原溫度，還原時間3分鐘，45nm的Cu2O薄膜即可還原成25nm的Cu薄膜，銅原子在銅膜中的含量可到達95(at.%)。
之後，將還原溫度固定在220及260℃，再用乙醇以不同的還原時間來將Cu2O薄膜還原成Cu薄膜，從薄膜厚度、電阻率、ESCA圖譜、銅原子在膜中的濃度變化可知，隨著還原時間增加，Cu2O薄膜逐漸還原成Cu薄膜。藉由ESCA的縱深分佈(depth profile)分析發現，還原溫度220℃、260℃，經過5分鐘的還原，薄膜中銅原子的濃度都約為95(at.%)，因此可知我們所沈積之銅膜具有高純度、緻密的膜面、較低的電阻率(89μΩ-cm)，且低污染物含量的優點。

This study investigated the reduction process of Cu2O film which was deposited in the first step of a two-step MOCVD using the water vapor as the additive and Cu(hfac)2 as the precursor .
First, a 45 nm cuprous oxide (Cu2O) film was grown at 260℃ for thirty minutes. Then, Cu2O films with a thickness of 45 nm reduced to metallic Cu films by the exposure to ethyl alcohol at different reduction temperatures for three minutes. The experiment results of XPS analysis, resistivity, thickness, and the Cu atom concentration of the films deposited at various reduction temperatures show that with an increase in the reduction temperature, the Cu2O films could be reduced to Cu films more sufficiently. The 45 nm Cu2O film was reduced to 25 nm Cu films at 280℃after three minutes of reduction. The Cu atom concentration in Cu film was around 95 at.%.
The Cu2O films were reduced to Cu films at 220 and 260℃ for different reduction times. The experiment results of film thickness, resistivity, the XPS spectrum, and the Cu atom concentration of the films deposited with various reduction time showed that with an increase in the reduction time, the Cu2O films could be reduced to Cu films more sufficiently. The Cu atom concentration is about 95 at.% for a reduction time of five minutes at 220 and 260℃. The Cu films deposited by the two-step MOCVD have high purity, smooth surface, low resistivity, and low concentrations of impurities.

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