近年來，發藍光的LED 已是目前最重要的光電元件，由於GaN材料製程上的進步，使得藍光GaN/GaInN 發光二極體研製成功，III族氮化物材料已經逐漸成為半導體領域中一顆耀眼的新星。III族氮化物因製備條件的不同可為閃鋅礦結構，也可為纖鋅礦（Wurtzite）結構，閃鋅礦結構的III族氮化物為間接半導體，而纖鋅礦結構的III族氮化物為直接半導體，具有很好的發光性能。
本實驗於矽基板上濺鍍不同觸媒層，並將鎵塊圍繞基板四周圍，藉由熱蒸發反應法，於600℃~900℃成長氮化鎵奈米線。其間並嘗試通入少量氫氣希望降低其成長溫度，實驗中也將鍍有雙層觸媒的基板經退火處理，再進行一維材料成長並觀察退火溫度對成長形態是否造成影響。
實驗結果發現，以熱反應蒸發法於覆有Au、Au/Al、Au/In的矽基板上，當溫度800 oC，氨氣流量100 sccm、氮氣流量50 sccm，製備出氮化鎵奈米線，其長度約數微米，直徑約40 – 60 nm，從TEM分析中，說明了在氮化鎵奈米線的頂端無觸媒形成，此結果證明，金觸媒會在基板上形成成核點，使鎵蒸氣溶入形成Au-Ga合金，有利形成氮化鎵奈米線。
能否成長氮化鎵奈米線的關鍵，我們推論適當的觸媒種類、氮化鎵適合成長溫度、反應期間通入的氣體種類為重要因素。

Due to the progress of the manufacturing GaN process, GaN/GaInN light-emitting diodes (LEDs) have successfully developed and are the most important electrooptic component. Therefore, group III nitrides have become an important field of semiconductor materials. Group III nitrides have two kinds of structures, zinc blende and wurtzite, depending upon the process conditions. Zinc blende belongs to an indirect semiconductor and wurtzite with good luminescent properties a direct one.
We report an approach to the synthesis of GaN nanowires on different metallic layer-coated substrate through the reaction of Ga with NH3 gas at growth temperatures in the range of 600oC~900 oC. The process parameters such as the different catalyst substrates, the reactive gas, the growth temperature, the annealing temperature were investigated to study the growth of one-dimensional GaN nanowires.
1-D GaN nanowires with a diameter of 40 – 60 nm and a length of several micrometers were grown on the Au,Au/Al, Au/In catalyzed substrates at growth temperature of 800oC, an ammonia flow rate of 100 sccm, and a nitrogen flow rate of 50 sccm. The different metallic layer-coated substrates were obtained by the evaporating reaction method. No catalysts at the tip of GaN nanowires were observed by TEM and a growth mechanism of self-catalytic growth was proposed. In this mechanism, liquid gold catalyst provides nucleation points on substrate, gallium vapor dissolutes into the gold catalyst and becomes Au-Ga alloy, and the excess Ga in alloy provides the sites for self-catalytic reaction to form the GaN nanowires.
The major factors for successfully growing the 1-D GaN involve the selections of the catalyst, the growth temperature, the reactants, annealing temperature of the catalytic substrate etc.

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