本論文針對碳化矽的低溫製備，考慮利用具有低共晶點的金屬矽化物合金作為合成碳化矽的矽來源，利用金屬矽化物合金比起原始組成之金屬有熔點急劇下降的特性，期望在較低的溫度下使其與活性碳反應來生成碳化矽鍵結。
實驗上採用電子束與熱蒸鍍法共蒸鍍石墨與合金，在合金的共晶溫度附近使矽源蒸發，使合金分子在基板表面與電子束蒸發之碳源結合而成長出碳化矽薄膜。首先，在以共晶溫度為363 ℃的金矽合金沉積實驗發現，在280 ℃的基板上沉積物中的矽原子構成即有31%呈現碳化矽鍵結，且當基板溫度升至480℃時碳化矽鍵結可達到54%。將沉積物中碳化矽鍵結轉化率對基板溫度的變化求得約2.2 kcal/mol的活化能，可據以推測金矽合金蒸發物吸附到基板後的表面擴散為沉積物得以轉化成碳化矽鍵結的速率決定步驟。
其次在使用共晶溫度為835 ℃的銀矽合金的沉積實驗發現，基板溫度在300 ~ 600℃範圍內沉積物的碳化矽鍵結轉化活化能約為1.8 kcal/mol,，惟Si-C鍵結含量在基板可調的最高溫度600℃時僅達7.8 at%，顯示提升基板溫度至合金共晶溫度以上使得吸附物種擁有較高的表面移動度為碳化矽鍵結生成的必要條件。

In this study, silicon carbide was synthesized, for the first time, utilizing metal silicide alloys with low eutectic point as the silicon resource to react with activated carbon at low temperatures. First of all, co-deposition of gold silicide and graphite was performed using thermal evaporation and electron-beam deposition techniques, respectively. The deposition results showed that 31% of the silicon in the original alloy is converted to Si-C bonding at 280 °C substrate temperature which is even lower that the eutectic point of gold silicide (363 °C). An energy barrier of 2.2 kcal/mol was obtained from the variation of Si-C bonding conversion ratio with respect to substrate temperature, suggesting that surface diffusion of the absorbed Au-Si alloy species controls the Si-C bonding conversion process.
Secondly, in the deposition experiment of Ag-Si alloy system that has a much higher eutectic point of 835 °C, the activation energy for the Si-C bonding transformation when the substrate temperatures was in the range of 300-600 °C was about 1.8 kcal/mol. However, Si-C bonding conversion was as low as 7.8 atomic percentage. This result indicated that high substrate temperature is necessary to provide enough surface energy for the adsorbed silicide species to convert to SiC bonding.

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