本論文主要之研究為利用量子井混合效應來設計製作雷射與電
吸收調變器共平面結構之積體化元件，使其能運用在高速的光通訊系
統中。主動層材料為磷砷化銦鎵（InGaAsP）的材料。發光波段主要
設計在1550 nm。
在元件製作的結構上，為了達到高速傳輸（>40 Gbits/s），元件的
寄生電容要越小越好，而行波式電極克服了集總式電極所產生的高電
容電阻效應，可達到更高速的調變，故本研究選擇行波式共平面結構
來製作。而經由模擬電吸收調變器吸收頻譜的分析，為了達到傳輸時
較低的傳輸損耗（<10 dB）與較高的信號明滅比（>15 dB），分析出
來雷射區與電吸收調變區最佳的能隙波長偏移量為52 nm至64 nm之
間，在操作偏壓為1.2 伏特的條件下，信號明滅比可達到18 dB。而
藉由本實驗所設計出的量子井混合效應造成的能隙偏移量，至多可達
98 nm左右的偏移，足以達成本實驗所要求之最佳能隙偏移值。
本論文亦以單一主動層（Single Active Layer）技術設計一對照組
與量子井混合技術比較。此技術是直接將布拉格波長設置在電吸收調
變器吸收邊緣上，不需額外的蝕刻或離子佈值。經由模擬分析，雷射
主動層結構之發光波段預估可達到1600 nm。

The quantum well intermixing（QWI）technique is used to fabricate
the integrated device that combines a distributed feedback laser（DFB）
and an electro-absorption modulator（EAM） on semi-insulating substrate
for very high speed fiber communication system（>40 Gbits/s）. The
active layers of quantum wells are made of InGaAsP materials, and the
lasing wavelength is designed to be 1550 nm.
In the device structure, the traveling-wave（TW）structure is better
than the lumped structure due to its lower parasitic capacitance, which
leads to a high modulation bandwidth. We choose the traveling-wave
coplanar structure to realize the DFB/EAM integrated devices.
To obtain lower transmission loss （< 10 dB） and higher extinction
ratio（>15 dB）, the EAM absorption spectrum is analyzed, and the
optimal blue shift value is approximately 52 to 64 nm. In this range of
blue shift wavelength, a high extinction ratio（>18dB）can be obtained for
1.2 V driving voltage. The maximum blue shift value can reach to 98 nm
for the QWI annealing test.
For comparisons with the QWI device, the identical active layers
and used for realizing the integrated DFB/EAM laser, the key concept of
this technique is to locate the lasing wavelength of the DFB at the
absorption edge of EAM. Therefore, we should make sure that the laser
could lase at the wavelength of absorption edge of the EAM. From the
simulation results, the lasing wavelength may exceed 1600 nm.

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