研究生: |
曾柏淵 Po-Yuan Tseng |
---|---|
論文名稱: |
使用鍺甲烷超高真空化學氣相沉積法於矽晶圓上的異質奈米結構選擇性磊晶成長 之研究 Formation of germanium quantum dots by GeH4-UHV-CVD |
指導教授: |
洪儒生
Lu-Sheng Hong |
口試委員: |
林麗瓊
Li-Chyong Chen 李嘉平 Chia-Pyng Lee |
學位類別: |
碩士 Master |
系所名稱: |
工程學院 - 化學工程系 Department of Chemical Engineering |
論文出版年: | 2005 |
畢業學年度: | 93 |
語文別: | 中文 |
論文頁數: | 94 |
中文關鍵詞: | 奈米結構 、鍺量子點 、超高真空 、選擇性化學氣相沉積 、超薄氧化層 |
外文關鍵詞: | Nanostructure, Ge quantum dots, UHV, Selective CVD, Ultra-thin SiO2 |
相關次數: | 點閱:286 下載:0 |
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摘要
關鍵詞:奈米結構、鍺量子點、超高真空、選擇性化學氣相沉積、超薄氧化層
本論文乃以鍺甲烷作為原料氣體的超高真空化學氣相沉積法,探討在Si(100)與SiO2/Si(100)基材上以選擇性化學氣相沉積方式製作異質的鍺奈米結構現象。初期先就有關異質介面Ge/Si系統的奈米結構成長做為探討的議題,選擇採用分解溫度較低的鍺甲烷超高真空化學氣相反應沉積系統進行鍺磊晶成長的探討。結果發現在580 ℃及鍺甲烷分壓為10-4 Torr下,在Si(100)表面的鍺磊晶成長依循著S-K成長模式(Stranski-Krastanov),即先在表面形成約為3.8個鍺原子的連續層,之後形成三度空間的核。此外,發現於同一條件下在超薄氧化層SiO2上-Si-OH終端表面無任何的鍺沉積,表示鍺甲烷在Si-H與Si-OH不同終端表面具有選擇性的成長行為。特別值得注意的現象是當成長中加入離子化機制時,經3分鐘沉積後可長出直徑約10~15奈米,密度高達3x1010cm-2且均勻分布的鍺量子點結構。
Abstract
Keywords: Nanostructure, Ge quantum dots, UHV, Selective CVD, Ultra-thin SiO2
By performing GeH4-UHV-CVD, we discuss about the selective epitaxial growth of germanium quantum dots on Si(100) and SiO2/Si(100) substrates. Firstly applying GeH4 of lower dissociation temperature for UHV-CVD to observe the growth behavior of Ge/Si hetero-structure, we found the Stranski-Krastanove mode was followed under temperature of 580 ℃ and reactant pressure of 10-4 Torr, i.e. the Ge atoms formed a wetting layer of 3.8 ML in thickness on the surface and then the growth mode transits into 3D island growth. Meanwhile we found no Ge atom deposited on the SiO2 with Si-OH terminated surface under the same experimental condition which conforms the selective growth behavior of GeH4 on Si-H and Si-OH terminated surfaces. Special attention was drawn to the phenomenon that when we introduce the ionization mechanism into our process, we obtain Ge quantum dots of 10~15 nm in diameter and a density of 3×1010 cm-2 with uniform size distribution under 3 min growth.
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